丝印代码：10S40A；10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

丝印代码：10S40A；10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

丝印代码：10S40A；10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

丝印代码：10S40A；10A, 400V ULTRA-FAST RECOVERY RECTIFIER

DESCRIPTION SFR10S40AD/S is an Ultra-Fast Recovery Diode, fabricated in advanced silicon planar epitaxial process. The process parameter and the device structure are fine tuned with optimized performance of forward voltage drop and reverse recovery time. Precise epitaxial doping control, advance

TSS KU Series

TSS KU Series SMD

SCHOTTKY BARRIER RECTIFIERS(10A,30-60V)

SWITCHMODE POWER RECTIFIERS D2PAK SURFACE MOUNT POWER PACKAGE The D2PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art device have the following features: * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Gu

10A Trench Low Barrier Diode

文件：466.36 Kbytes Page：3 Pages

MOS GATED BARRIER RECTIFIER

文件：136.63 Kbytes Page：3 Pages

SCHOTTKY BARRIER RECTIFIER

文件：98.63 Kbytes Page：2 Pages