10N价格

参考价格:¥0.0000

型号:10N-4000D-S2 品牌:Misc 备注:这里有10N多少钱,2024年最近7天走势,今日出价,今日竞价,10N批发/采购报价,10N行情走势销售排行榜,10N报价。
型号 功能描述 生产厂家&企业 LOGO 操作

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

35A, 1200V, NPT Series N-Channel IGBT

TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil

35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

200V N-Channel MOSFET

Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

10A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 300V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10.5A, 400V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 500 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

600V N-Channel MOSFET

TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

CoolMOS Power MOSFET

FullyisolatedpackageN-ChannelEnhancementModeLowRDSon,HighVDSSMOSFETUltralowgatecharge Features •FastCoolMOSpowerMOSFET-4thgeneration -Highblockingcapability -Lowestresistance -Avalancheratedforunclampedinductiveswitching(UIS) •Fullyisolatedpa

IXYS

IXYS Integrated Circuits Division

IXYS

10A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60KisanN-channelPowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomersaminimumon-stateresistanceandsuperiorswitchingperformance,etc.TheUTC10N60KisgenerallyappliedinhighefficientDCtoDCconverters,PWMmotorcontrolsandbridgecircuits,et

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60KisanN-channelPowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomersaminimumon-stateresistanceandsuperiorswitchingperformance,etc.TheUTC10N60KisgenerallyappliedinhighefficientDCtoDCconverters,PWMmotorcontrolsandbridgecircuits,et

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 600V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60KisanN-channelPowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomersaminimumon-stateresistanceandsuperiorswitchingperformance,etc.TheUTC10N60KisgenerallyappliedinhighefficientDCtoDCconverters,PWMmotorcontrolsandbridgecircuits,et

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

10A, 650V N-CHANNEL POWER MOSFET

■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC10N70-CisahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC10N70-CisahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR

DESCRIPTION TheUTC10N70-CisahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

800V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

800V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

800V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

800V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

800V N-CHANNEL POWER MOSFET

DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

UTC

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:110.33 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:110.48 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:111.17 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:111.55 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:71.8 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:111.33 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

OptiMOS Buck converter series

文件:452.29 Kbytes Page:8 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

N-Channel 30-V (D-S) MOSFET

文件:1.7366 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel 30-V (D-S) MOSFET

文件:1.83276 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel 30-V (D-S) MOSFET

文件:1.7366 Mbytes Page:8 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

文件:108.59 Kbytes Page:6 Pages

A-POWERAdvanced Power Electronics Corp.

富鼎先進電子富鼎先進電子股份有限公司

A-POWER

SIPMOS Power-Transistor

文件:787.36 Kbytes Page:8 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

10N产品属性

  • 类型

    描述

  • 型号

    10N

  • 制造商

    Thomas & Betts

  • 制造商

    Thomas & Betts

  • 功能描述

    SERVICE ENTR CONN(AWG AL-CU)10 STR

更新时间:2024-6-22 15:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD
2023+
TO263
8700
原装现货
FAIRCHILD
24+
TO-247
12300
独立分销商,公司只做原装,诚心经营,免费试样正品保证
INFINEON
23+
SOT-263
8000
专注配单,只做原装进口现货
UTC
23/22+
TO247
6000
20年老代理.原厂技术支持
FAIRCHILD
TO-247
608900
原包原标签100%进口原装常备现货!
MAXIMUM
23+
TO-247
6000
原厂渠道可大量供应
FAIRCHILD/仙童
22+
TO-247
50000
只做原装假一罚十,欢迎咨询
ON-安森美
24+25+/26+27+
TO-247-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
FAIRCHILD
04+
TO-263
17
一级代理,专注军工、汽车、医疗、工业、新能源、电力
FAIRCHILD/仙童
22+
TO-247
6000
十年配单,只做原装

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