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10N价格
参考价格:¥0.0000
型号:10N-4000D-S2 品牌:Misc 备注:这里有10N多少钱,2024年最近7天走势,今日出价,今日竞价,10N批发/采购报价,10N行情走势销售排行榜,10N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
35A, 1200V, NPT Series N-Channel IGBT TheHGTG10N120BN,HGTP10N120BNandHGT1S10N120BNSareNon-PunchThrough(NPT)IGBTdesigns.TheyarenewmembersoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode TheHGTG10N120BNDisaNon-PunchThrough(NPT)IGBTdesign.ThisisanewmemberoftheMOSgatedhighvoltageswitchingIGBTfamily.IGBTscombinethebestfeaturesofMOSFETsandbipolartransistors.ThisdevicehasthehighinputimpedanceofaMOSFETandthelowonstateconductionlossofab | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200V N-Channel MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology. ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhigh | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 300V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N30isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10.5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10.5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10.5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10.5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10.5A, 400V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N40isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyspecializesinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypul | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N50isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomerswithplanarstripeandDMOStechnology.Thistechnologyallowsaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypulseintheavalanc | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
600V N-Channel MOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtomini-mizeon-stateresistance,providesuperiorswitchingperfor-mance,andwithstandhighenergypul | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
CoolMOS Power MOSFET FullyisolatedpackageN-ChannelEnhancementModeLowRDSon,HighVDSSMOSFETUltralowgatecharge Features •FastCoolMOSpowerMOSFET-4thgeneration -Highblockingcapability -Lowestresistance -Avalancheratedforunclampedinductiveswitching(UIS) •Fullyisolatedpa | IXYS IXYS Integrated Circuits Division | |||
10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60KisanN-channelPowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomersaminimumon-stateresistanceandsuperiorswitchingperformance,etc.TheUTC10N60KisgenerallyappliedinhighefficientDCtoDCconverters,PWMmotorcontrolsandbridgecircuits,et | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60KisanN-channelPowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomersaminimumon-stateresistanceandsuperiorswitchingperformance,etc.TheUTC10N60KisgenerallyappliedinhighefficientDCtoDCconverters,PWMmotorcontrolsandbridgecircuits,et | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60KisanN-channelPowerMOSFETusingUTC’sadvancedtechnologytoprovidecustomersaminimumon-stateresistanceandsuperiorswitchingperformance,etc.TheUTC10N60KisgenerallyappliedinhighefficientDCtoDCconverters,PWMmotorcontrolsandbridgecircuits,et | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N60isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
10A, 650V N-CHANNEL POWER MOSFET ■DESCRIPTION TheUTC10N65isahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingappl | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION TheUTC10N70-CisahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION TheUTC10N70-CisahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR DESCRIPTION TheUTC10N70-CisahighvoltageandhighcurrentpowerMOSFET,designedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchinga | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
800V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
800V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
800V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
800V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
800V N-CHANNEL POWER MOSFET DESCRIPTION TheUTC10N80usesUTC’sadvancedproprietary,planarstripe,DMOStechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON)=1.1Ω@VGS=10V | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | |||
N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:110.33 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:110.48 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:111.17 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:111.55 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:71.8 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:111.33 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
OptiMOS Buck converter series 文件:452.29 Kbytes Page:8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
N-Channel 30-V (D-S) MOSFET 文件:1.7366 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel 30-V (D-S) MOSFET 文件:1.83276 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel 30-V (D-S) MOSFET 文件:1.7366 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 文件:108.59 Kbytes Page:6 Pages | A-POWERAdvanced Power Electronics Corp. 富鼎先進電子富鼎先進電子股份有限公司 | |||
SIPMOS Power-Transistor 文件:787.36 Kbytes Page:8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |
10N产品属性
- 类型
描述
- 型号
10N
- 制造商
Thomas & Betts
- 制造商
Thomas & Betts
- 功能描述
SERVICE ENTR CONN(AWG AL-CU)10 STR
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
2023+ |
TO263 |
8700 |
原装现货 |
|||
FAIRCHILD |
24+ |
TO-247 |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
|||
INFINEON |
23+ |
SOT-263 |
8000 |
专注配单,只做原装进口现货 |
|||
UTC |
23/22+ |
TO247 |
6000 |
20年老代理.原厂技术支持 |
|||
FAIRCHILD |
TO-247 |
608900 |
原包原标签100%进口原装常备现货! |
||||
MAXIMUM |
23+ |
TO-247 |
6000 |
原厂渠道可大量供应 |
|||
FAIRCHILD/仙童 |
22+ |
TO-247 |
50000 |
只做原装假一罚十,欢迎咨询 |
|||
ON-安森美 |
24+25+/26+27+ |
TO-247-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
FAIRCHILD |
04+ |
TO-263 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD/仙童 |
22+ |
TO-247 |
6000 |
十年配单,只做原装 |
10N规格书下载地址
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- 10MF-25V-A
- 10MF2
- 10MBC9P
- 10MBC7P
- 10MBC6P
- 10MBC5P
- 10MBC3P
- 10M8E
- 10M8D
- 10M8C
- 10M8B
- 10M8A
- 10M7C
- 10M7B
- 10M7A
- 10M30D
10N数据表相关新闻
10M50DDF256C8G
10M50DDF256C8G
2023-6-1410N30L-TO220T-TG_UTC代理商
10N30L-TO220T-TG_UTC代理商
2023-2-1310N65L-TO220F1T-TGML_UTC代理商
10N65L-TO220F1T-TGML_UTC代理商
2023-2-210N65KL-TO220F1T-TGMTQ
10N65KL-TO220F1T-TGMTQ
2023-1-3110MQ100NPBF 肖特基二极管 原装正品,欢迎咨询。
10MQ100NPBF 原装正品,欢迎咨询。
2020-11-1310MQ060N 肖特基二极管 进口原装,公司现货。
10MQ060N 进口原装,公司现货。
2020-11-13
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