SILICON RECTIFIER DIODES

PRV : 50 - 1000 Volts Io : 10 Amperes FEATURES : * Diffused Junction * High current capability and Low Forward Voltage Drop * Surge Overload Rating to 600A Peak * Low Reverse Leakage Current * Pb / RoHS Free

10 Amp Rectifier 50 to 1000 Volts

Features ● Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) ● Halogen free available upon request by adding suffix -HF ● High Current Capability and Low Forward Voltage Drop ● Surge Overload Rating to 400A Peak ● Low Reverse Leakage Current and

10.0 AMPS. Silicon Rectifiers

Voltage Range 50 to 1000 Volts Current 10.0 Amperes Features ◇ Low forward voltage drop ◇ High current capability ◇ High reliability ◇ High surge current capability

10Amp Rectifier 50to1000Volts

Features ● Diffused Junction ● High Current Capability and Low Forward Voltage Drop ● Surge Overload Rating to 600A Peak ● Low Reverse Leakage Current ● Plastic Material - UL Flammability Classification 94V-0

10A RECTIFIER

Features ● High Current Capability and Low Forward Voltage Drop ● Surge Overload Rating to 600A Peak ● Low Reverse Leakage Current ● Lead Free Finish, RoHS Compliant (Note 3)

10A RECTIFIER

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standard rectifier

10 Amp Rectifier 50 to 1000 Volts

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10 Amp Rectifier 50 to 1000 Volts

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3 Watts, 20 Volts, Class A Linear to 1000 MHz

[GHz-Technology] GENERAL DESCRIPTION The 10A030 is a COMMON EMITTER transistor capable of providing 3 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes gold metalization and diffused ballasting to provi

10 Amp Rectifier 50 to 1000 Volts Glass Passivated

Features • Lead Free Finish/RoHS Compliant(Note 1) (P Suffix designates RoHS Compliant. See ordering information) • High Current Capability and Low Forward Voltage Drop • Surge Overload Rating to 200A Peak • Low Reverse Leakage Current and Galss Passivared Junction • Epoxy meets UL 94 V-0 fla

封装/外壳：55FT 包装：散装 描述：RF TRANS NPN 24V 2.5GHZ 55FT 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF/Microwave Si BJT Power Devices & Pallets

普通整流二极管

10A RECTIFIER

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Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation

SBD DUAL DIODES - CATHODE COMMON

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Dual Diodes – Cathode Common * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation * Wire-Bonded technology

Schottky Barrier Diode

FEATURES * Similar to TO-220AB Case * Fully Molded Isolation * Extremely Low Forward Voltage Drop * Low Power Loss,High Efficiency * High Surge Capability * Tj=150 °C operation