RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1012GN-1000V is an internally matched, common-source, class-AB, GaN-on-SiC HEMT transistor capable of providing over 19 dB gain, 1000 W of pulsed RF output power at 32 ?s, and 2% duty cycle pulse format across the 1025 MHz to 1150 MHz band. The transistor has internal pre-match for optimal p

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

1025-1150 MHz 800W L-Band Avionics Output Stage GaN Transistor

封装/外壳：55-KR 包装：卷带（TR） 描述：TRAN, GAN, 1030/1090 MHZ, 800W, 分立半导体产品 晶体管 - FET，MOSFET - 射频

120W STEP-DOWN SWITCHING REGULATOR

DESCRIPTION The GS-R1012 is a step-down switching voltage regulator suitable to provide 12V/10A output voltage from a wide input voltage range (18 to 36V). FEATURES ■ Wide input voltage range (18 to 36V) ■ High efficiency (90 min.) ■ Parallel operation with current sharing ■ Synchronization

FOR OPTICAL INFORMATION SYSTEMS

DESCRIPTION ML1XX2 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 30mW. ML1XX2 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

VTP Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window TO-46 package. Cathode is common to the case. These diodes exhibit low dark current under reverse bias and fast speed of response.

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.35 Kbytes Page：2 Pages