丝印代码：KEL11；5V ECL 1:2 Differential Fanout Buffer

General Description The 100EL11 is a 5V 1:2 differential fanout buffer. One differential input signal is fanned out to two identical differential outputs. By supplying a constant reference level to one input pin a single ended input condition is created. With inputs open or both inputs at VEE th

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLK BUFFER 1:2 8SOIC 集成电路（IC） 时钟缓冲器，驱动器

5V ECL 1:2 Differential Fanout Buffer

5V ECL 1:2 Differential Fanout Buffer

General Description The 100EL11 is a 5V 1:2 differential fanout buffer. One differential input signal is fanned out to two identical differential outputs. By supplying a constant reference level to one input pin a single ended input condition is created. With inputs open or both inputs at VEE th

5V ECL 1:2 Differential Fanout Buffer

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC CLK BUFFER 1:2 8SOIC 集成电路（IC） 时钟缓冲器，驱动器

ECL/PECL 1:2 Differential Fanout Buffer

[Arizona-Microtek] DESCRIPTION The AZ10/100EL11 is a differential 1:2 fanout gate. The device is functionally similar to the E111 device but with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111, the EL11 is ideally suit

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho