3MTM Static Shielding Bag SCC 1000

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Nylon PCB Supports - Imperial Spacing

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包装：袋 描述：BAG 2X6\ 静电控制，防静电，ESD，无尘室产品 静电控制屏蔽包，防静电袋、物料

Platinum sensor with wires For high temperatures with a TCR of 3750 ppm/K

Benefits & Characteristics ▪ Excellent long-term stability ▪ Low self-heating ▪ Fast response time ▪ Vibration and temperature shock resistant ▪ TCR of 3750 ppm/K

GPS/GLONASS/Beidou/Galileo Patch Dual Feed Antenna

APPLICATIONS •Embedded design •POS, Headsets, Tablets •Gateway, Access Point •Handheld •Telematics •Tracking •Healthcare •M2M,Industrial devices •SmartGrid •OBD-II

Decade Divider, Single In-Line, Thin Film Divider, Through Hole Resistor Network

FEATURES • Tight ratio tolerance (0.01 ) • 5 decade ratio divider • High voltage capability (300 V) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912

BLF 5.08/17/90LH SN OR BX

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EM-CPS-DA-45C/32A - Adapter

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包装：卷带（TR） 描述：RF ANT 5GHZ STAMPED MET SLDR SMD RF/IF，射频/中频和 RFID RF 天线

插拔式接线端子

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally

N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

POWER MOS IV SINGLE DIE ISOTOP® PACKAGE N- CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

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GATE TURN THYRISTORS

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