0.8A, 650V  N-CHANNEL  SUPER-JUNCTION MOSFET

The UTC  08NM65 is an Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in powe RDS(on) < 6.15 Ω @ VGS=10V, ID=0.4AHigh breakdown voltage;

0.8A, 650V N-CHANNEL SUPER-JUNCTION MOSFET

The UTC 08NM65-V is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in powe RDS(on) < 7.3Ω @ VGS=10V, ID=0.4AHigh breakdown voltage;