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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25Ω 7.5A 10V CEB08N6A 600V 1.25Ω 7.5A 10V CEF08N6A 600V 1.25Ω 7.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

CET

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

CET

华瑞

更新时间:2026-5-22 17:30:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
23+
TO
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET
24+
TO220
4652
公司原厂原装现货假一罚十!特价出售!强势库存!
CET
25+
TO-220
30000
代理全新原装现货,价格优势
CET
23+
TO220/3
7000
绝对全新原装!100%保质量特价!请放心订购!
CET
24+
TO2203
6734
CET
25+
TO-220
11000
原装正品 有挂有货 假一赔十
CET
06+
TO-220
2010
全新 发货1-2天
SR
23+
TO-220
5000
原装正品,假一罚十
CET/華瑞
20+
TO-220
7500
现货很近!原厂很远!只做原装
CET
21+
TO-220
10
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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