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N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 600V, 6.2A, RDS(ON) = 1.25W @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-251 & TO-252 package. Lead-free plating ; RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25Ω 7.5A 10V CEB08N6A 600V 1.25Ω 7.5A 10V CEF08N6A 600V 1.25Ω 7.5A 10V ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Le

CET

华瑞

更新时间:2025-12-25 12:00:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
CET/華瑞
2511
TO-263
360000
电子元器件采购降本30%!原厂直采,砍掉中间差价
CET/華瑞
23+
TO-263
79288
原厂授权一级代理,专业海外优势订货,价格优势、品种
CET/華瑞
24+
NA/
7250
原装现货,当天可交货,原型号开票
INFINEON/英飞凌
23+
TO-220
69820
终端可以免费供样,支持BOM配单!
CET
23+
TO-263
7300
专注配单,只做原装进口现货
DVBILIER
23+
NA
880000
明嘉莱只做原装正品现货
CET
24+
50000
CET
24+
TO-263
90000
进口原装现货假一罚十价格合理
CET
2025+
TO-252
4835
全新原厂原装产品、公司现货销售
CET/華瑞
2022+
TO-263
50000
原厂代理 终端免费提供样品

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