0.5A, 650V  N-CHANNEL  POWER MOSFET

The UTC 05N65-CB is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, RDS(ON) <20Ω @ VGS = 10V, ID = 0.25AFast switching capabilityAvalanche energy specifiedImproved dv/dt capability, high ruggedness;

Power MOSFET

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N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 650V, 4A, RDS(ON) = 2.4Ω @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead-free plating ; RoHS compliant. ■ TO-251 & TO-252 package.

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired