4V Drive Nch MOSFET

文件：512.49 Kbytes Page：7 Pages

丝印代码：050N10N5；OptiMOS™ 5 Power-Transistor, 100 V

Features « Optimized for high performance SMPS, e.g. sync. rec. «100 avalanche tested « Superior thermal resistance. « N-channel « PbHfree lead plating; RoHS compliant « Halogen-free according to IEC61249-2-21 « 175°C rated

丝印代码：050N105S；OptiMOSTM 5 Power-Transistor, 100 V

Features • Ideal for high frequency switching and sync. rec. • Excellent gate charge x RDS(on) product (FOM) • Very low on-resistance RDS(on) • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：050N10NS；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：050N10NS；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：050N10NS；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

丝印代码：050N10NS；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

丝印代码：050N10NS；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON),max

丝印代码：050N10N5；OptiMOSTM5 Power-Transistor, 100 V

文件：972.73 Kbytes Page：11 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 5A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.19Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

丝印代码：TL；4V Drive Nch MOSFET

文件：512.49 Kbytes Page：7 Pages

4V Drive Nch MOSFET

文件：918.02 Kbytes Page：10 Pages

N-Channel 100 V (D-S) MOSFET

文件：986.29 Kbytes Page：7 Pages