丝印代码：040N；MOSFET - Power, Dual N-Channel 60 V, 38 m, 18 A

Features • Small Footprint for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Wettable Flanks Product • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

丝印代码：040N014；Single N-channel Trench MOSFET 40V 1.4mΩ 194A

FEATURES • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • DC/DC and AC/DC converters • Brushed and BLDC motor drive systems

丝印代码：040N043；Single N-channel Trench MOSFET 40V 4.3mΩ 88A

FEATURES • Trench power MOSFET technology • N-channel, normal level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • Switching applications • Brushed and BLDC Motor drive systems

丝印代码：040N070；Single N-channel Trench MOSFET 40V 7.0mΩ 35A

FEATURES • Trench power MOSFET technology • N-channel, normal level • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified APPLICATIONS • Motor inverter • Switching applications

丝印代码：040N036L；Automotive MOSFET 40V 3.6mΩ 80A

FEATURES • Trench power MOSFET technology • Single N-channel trench, Logic level • Enhanced avalanche ruggedness • 100% Avalanche tested • Maximum 175°C junction temperature • AEC-Q101 qualified and PPAP capable APPLICATIONS • Switching applications • Motor drive systems

丝印代码：040N08NS；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

丝印代码：040N06N；Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

丝印代码：040N08NS；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：040N03F2；MOSFET StrongIRFET™ 2 Power‑Transistor, 30 V

Features • Optimized for a wide range of applications • N‑channel, logic level • 100% avalanche tested • 175°C rated • Pb‑free lead plating; RoHS compliant • Halogen‑free according to IEC61249‑2‑21

丝印代码：040N08NS；StrongIRFETTM 2 Power-Transistor

Features • Optimized for a wide range of applications • N-Channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：040N06NS；StrongIRFETTM2 Power-Transistor

Features • Optimized for wide range of applications • N-channel, normal level • 100 avalanche tested • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21

丝印代码：040N08NS；StrongIRFETTM2Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

丝印代码：040N60EC；600V N-Channel Super Junction MOSFET

Feature:  RDS(ON) Max, VGS@10V: 40mΩ  Easy to use/ drive  High Speed Switching and Low RDS(ON)  100% Avalanche Tested  100% Rg Tested  Lead free in compliance with EU RoHS 2.0  Green molding compound as per IEC 61249 standard Application  PFC of Industrial Power/ Server

丝印代码：040N08NS；80V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

丝印代码：040N10NS；100V N-Channel Enhancement Mode MOSFET

Feature  RDS(ON)

丝印代码：040N10SC；OptiMOSTM 5 Power-Transistor, 100 V

文件：1.01508 Mbytes Page：11 Pages

丝印代码：040N065S；OptiMOSTM 5 Power-Transistor, 60 V

文件：1.07468 Mbytes Page：10 Pages

丝印代码：040N085S；OptiMOSTM 5 Power-Transistor, 80 V

文件：1.07512 Mbytes Page：10 Pages

丝印代码：040N08NS；StrongIRFETTM 2 Power-Transistor

文件：1.11335 Mbytes Page：11 Pages

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

Superior thermal resistance

Features •OptimizedforhighperformanceSMPS,e.g.sync.rec. •100avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

N-Channel 30-V (D-S) MOSFET

文件：1.6906 Mbytes Page：7 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.83438 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.6906 Mbytes Page：7 Pages

SCRs

General Description The Teccor line of thyristor SCR semi-conductors are half-wave, unidirectional, gate-controlled rectifiers which complement Teccors line of sensitive SCRs. Teccor offers devices with ratings of 1 A to 70 A and 200 V to 1000 V, with gate sensitivities from 10 mA to 50 mA. If ga

RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS

DESCRIPTION The SD4011 is a gold metallized NPN silicon bipolar device optimized for Class A operation in TV Band IV/V. Suitable for a variety of other UHF linear applications, SD4011 is supplied in an industry-standard .280 stud package. ■ GOLD METALLIZATION ■ INTERNAL INPUT MATCHING ■ COMMO

HAS SERIES - 60 WATT

文件：177.19 Kbytes Page：3 Pages

HAS SERIES - 60 WATT

文件：177.19 Kbytes Page：3 Pages

HBD SERIES - DUAL OUTPUT, 60 WATT

文件：183.38 Kbytes Page：3 Pages