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SMD Schottky Barrier Diode

Features IO = 350mA VR = 20V to 40V - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device Mechanical Data - Case : 0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated

ANACHIP

易亨电子

SMD Schottky Barrier Diode

Features IO = 350mA VR = 20V to 40V - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device Mechanical Data - Case : 0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated

ANACHIP

易亨电子

SMD Schottky Barrier Diode

Features IO = 350mA VR = 20V to 40V - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device Mechanical Data - Case : 0603(1608) 1005(2512) standard package, molded plastic. - Terminals : Gold plated

ANACHIP

易亨电子

SMD Schottky Barrier Diode

IO = 350 mA VR = 20 to 40 Volts Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 1005(2512) standard package, molded plastic. Terminals: Gold

COMCHIP

典琦

SCRs 1-70 AMPS NON-SENSITIVE GATE

Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip

TECCOR

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