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ZXTN19价格
参考价格：￥1.5838
型号：ZXTN19020CFFTA 品牌：Diodes 备注：这里有ZXTN19多少钱，2024年最近7天走势，今日出价，今日竞价，ZXTN19批发/采购报价，ZXTN19行情走势销售排行榜，ZXTN19报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
ZXTN19 | 60V NPN low sat medium power transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat | Zetex Zetex Semiconductors |  |   |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | Zetex Zetex Semiconductors | | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | DIODESDiodes Incorporated 达尔科技 |  | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | Zetex Zetex Semiconductors | | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highgain •Highpeakcurr | Zetex Zetex Semiconductors | | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | Zetex Zetex Semiconductors | | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | DIODESDiodes Incorporated 达尔科技 | | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | Zetex Zetex Semiconductors | | | |
20V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximizetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Features | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highgain •Highpeakcurr | Zetex Zetex Semiconductors | | | |
20V NPN high gain transistor in SOT223 Features •BVCEX>70V •BVCEO>20V •BVECO>4.5V •IC=9AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor in SOT223 Features •BVCEX>70V •BVCEO>20V •BVECO>4.5V •IC=9AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highgain •Highpeakcurr | Zetex Zetex Semiconductors | | | |
20V NPN high gain transistor Description PackagedintheSOT89outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •7.5Acontinuouscurrent •Upto20Apeakcurrent •Verylowsaturation | Zetex Zetex Semiconductors | | | |
20V NPN high gain transistor in SOT89 Features •BVCEO>20V •IC=7.5AContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN TRANSISTOR IN SOT89 Features BVCEX>70V BVCEO>20V BVECO>4.5V IC=7.5AHighContinuousCurrent VCE(SAT) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN TRANSISTOR IN SOT89 Features BVCEX>70V BVCEO>20V BVECO>4.5V IC=7.5AHighContinuousCurrent VCE(SAT) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN high gain transistor Description PackagedintheSOT89outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •7.5Acontinuouscurrent •Upto20Apeakcurrent •Verylowsaturation | Zetex Zetex Semiconductors | | | |
20V NPN high gain transistor in SOT89 Features •BVCEO>20V •IC=7.5AContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
55V, NPN medium power transistor Description PackagedintheSOT89outlinethislowsaturation55VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Feature •Extremelylowequivalenton-resistanceof28mΩ •6Ampscontinuouscurre | Zetex Zetex Semiconductors | | | |
55V, SOT89, NPN medium power transistor Features •BVCEO>55V •IC=6.0AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
55V, NPN medium power transistor Description PackagedintheSOT89outlinethislowsaturation55VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Feature •Extremelylowequivalenton-resistanceof28mΩ •6Ampscontinuouscurre | Zetex Zetex Semiconductors | | | |
55V, SOT89, NPN medium power transistor Features •BVCEO>55V •IC=6.0AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
60V, SOT23F, NPN high gain power transistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof | Zetex Zetex Semiconductors | | | |
60V NPN HIGH GAIN POWER TRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu | DIODESDiodes Incorporated 达尔科技 | | | |
60V, SOT23F, NPN high gain power transistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof | Zetex Zetex Semiconductors | | | |
60V NPN HIGH GAIN POWER TRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu | DIODESDiodes Incorporated 达尔科技 | | | |
60V NPN low sat medium power transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat | Zetex Zetex Semiconductors | | | |
60V NPN low sat medium power transistor in SOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
60V NPN low sat medium power transistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat | Zetex Zetex Semiconductors | | | |
60V NPN low sat medium power transistor in SOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
100V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Features | Zetex Zetex Semiconductors | | | |
100V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Feat | DIODESDiodes Incorporated 达尔科技 | | | |
100V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageiscompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Features | Zetex Zetex Semiconductors | | | |
100V, SOT23F, NPN high gain power transistor Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance. Feat | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN low sat medium power transistor in SOT223 Features •BVCEO>100V •IC=5.5AContinuousCollectorCurrent •ICM=10APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN low sat medium power transistor in SOT223 Features •BVCEO>100V •IC=5.5AContinuousCollectorCurrent •ICM=10APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN medium power transistor in SOT89 Features •BVCEO>100V •IC=5.25AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN medium power transistor in SOT89 Features •BVCEO>100V •IC=5.25AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN POWER TRANSISTOR 文件：340.03 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN POWER TRANSISTOR 文件：340.03 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN POWER TRANSISTOR 文件：340.03 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN POWER TRANSISTOR 文件：427.45 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN POWER TRANSISTOR 文件：427.45 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
20V NPN HIGH GAIN POWER TRANSISTOR 文件：427.45 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
封装/外壳：SOT-23-3 扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 6.5A SOT23F 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PAMDiodes Incorporated 龙鼎威 |  | | |
20V NPN HIGH GAIN TRANSISTOR IN SOT223 文件：907.03 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
封装/外壳：TO-261-4，TO-261AA 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN 20V 9A SOT223-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | PAMDiodes Incorporated 龙鼎威 | | | |
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：487.42 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：487.42 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：341.84 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：341.84 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：503.98 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | | |
100V NPN MEDIUM POWER LOW SATURATION TRANSISTOR 文件：503.98 Kbytes Page：7 Pages | DIODESDiodes Incorporated 达尔科技 | | |
ZXTN19产品属性
- 类型
描述
- 型号
ZXTN19
- 制造商
ZETEX
- 制造商全称
ZETEX
- 功能描述
60V NPN low sat medium power transistor
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
SOT89 |
7906200 |
|||||
DIODES |
2016+ |
SOT23 |
12000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES |
2020+ |
SOT-223 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
ZETEX/DIODES |
22+ |
SOT-89 |
100000 |
代理渠道/只做原装/可含税 |
|||
Diodes Incorporated |
23+ |
TO-243AA |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
Diodes/美台 |
2021/2022+ |
NA |
12000 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
|||
DIODES/美台 |
20+ |
SOT-89 |
2157 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES/美台 |
21+ |
SOT-223 |
22800 |
公司只做原装,诚信经营 |
|||
ZETEX |
1408+ |
SSOP14 |
9000 |
绝对原装进口现货可开增值税发票 |
|||
DIODES/美台 |
1942+ |
SOT-223 |
9852 |
只做原装正品现货或订货!假一赔十! |
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2019-1-13
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