型号 功能描述 生产厂家&企业 LOGO 操作
W29C020

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

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Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

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Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

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Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020Cisa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020Cresultsinfastwri

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

256KX8CMOSFLASHMEMORY

GENERALDESCRIPTION TheW29C020isa2-megabit,5-voltonlyCMOSflashmemoryorganizedas256Kx8bits.Thedevicecanbewritten(erasedandprogrammed)in-systemwithastandard5Vpowersupply.A12-voltVPPisnotrequired.TheuniquecellarchitectureoftheW29C020resultsinfastwrite

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

封装/外壳:32-LCC(J 形引线) 包装:管件 描述:IC FLASH 2MBIT PARALLEL 32PLCC 集成电路(IC) 存储器

WinbondWinbond Electronics

华邦电子华邦电子股份有限公司

Winbond

2-Megabit256Kx85-voltOnlyCMOSFlashMemory

1.Description TheAT29C020isa5-volt-onlyin-systemFlashprogrammableanderasableread-onlymemory(PEROM).Its2megabitsofmemoryisorganizedas262,144bytes.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto70nswithpowerdissipatio

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

2-Megabit256Kx85-voltOnlyCMOSFlashMemory

1.Description TheAT29C020isa5-volt-onlyin-systemFlashprogrammableanderasableread-onlymemory(PEROM).Its2megabitsofmemoryisorganizedas262,144bytes.ManufacturedwithAtmel’sadvancednonvolatileCMOStechnology,thedeviceoffersaccesstimesto70nswithpowerdissipatio

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

2-megabit(256Kx8)5-voltOnlyFlashMemory

文件:426.27 Kbytes Page:17 Pages

AtmelAtmel Corporation

爱特梅尔爱特梅尔公司

Atmel

W29C020产品属性

  • 类型

    描述

  • 型号

    W29C020

  • 制造商

    WINBOND

  • 制造商全称

    Winbond

  • 功能描述

    256K X 8 CMOS FLASH MEMORY

更新时间:2024-3-29 18:09:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
WINBOND
1043+
DIP-L32P
65000
绝对公司现货库存
WINBOND
23+
DIP-32
5000
原装现货,优势热卖
BT
23+
PLCC
8890
价格优势/原装现货/客户至上/欢迎广大客户来电查询
WINBOND/华邦
22+
PLCC
7500
只做原装正品假一赔十!正规渠道订货!
WINBOND
21+
PLCC32
160000
全新原装 鄙视假货15118075546
BT
22+
PLCC
7992
诚信经营
WINBOND
2021+
DIP32
7240
百分百原装正品
SMD
23+
NA
15659
振宏微专业只做正品,假一罚百!
WINBOND
19+
DIP
10049
原装现货,优势库存,当天可发货
WINBOND
22+
DIP32
20000
原厂订货价格优势,可开13%的增值税票

W29C020芯片相关品牌

  • 3M
  • AVX
  • GSI
  • MA-COM
  • MARL
  • MORNSUN
  • PAIRUI
  • PCA
  • PF
  • RENESAS
  • TTELEC
  • XFMRS

W29C020数据表相关新闻