位置：首页 > IC中文资料第1489页 > VP0300
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
VP0300 | P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc |  |   |
P-ChannelEnhancement-ModeVerticalDMOSFETs AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimped | SUTEX Supertex, Inc | | | |
P-Channel30-V(D-S)MOSFETs features High-SideSwitching LowOn-Resistance:1.5 ModerateThreshold:–3.1V FastSwitchingSpeed:17ns LowInputCapacitance:60pF benefits EaseinDrivingSwitches LowOffset(Error)Voltage Low-VoltageOperation High-SpeedSwitching EasilyDrivenWithoutB | VishayVishay Siliconix 威世科技 |  | | |
P-Channel30-V(D-S)MOSFETs features High-SideSwitching LowOn-Resistance:1.5 ModerateThreshold:–3.1V FastSwitchingSpeed:17ns LowInputCapacitance:60pF benefits EaseinDrivingSwitches LowOffset(Error)Voltage Low-VoltageOperation High-SpeedSwitching EasilyDrivenWithoutB | VishayVishay Siliconix 威世科技 | | | |
P-Channel30-V(D-S)MOSFETs features High-SideSwitching LowOn-Resistance:1.5 ModerateThreshold:–3.1V FastSwitchingSpeed:17ns LowInputCapacitance:60pF benefits EaseinDrivingSwitches LowOffset(Error)Voltage Low-VoltageOperation High-SpeedSwitching EasilyDrivenWithoutB | VishayVishay Siliconix 威世科技 | | | |
P-ChannelEnhancement-ModeMOSFETTransistors 文件：250.87 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
包装：管件 描述：MOSFET P-CH 30V 0.32A TO-205 分立半导体产品 晶体管 - FET，MOSFET - 单个 | VishayVishay Siliconix 威世科技 | | | |
P-Channel30-V(D-S)MOSFETs 文件：42.19 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
P-ChannelEnhancement-ModeMOSFETTransistors 文件：250.87 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
P-ChannelEnhancement-ModeMOSFETTransistors 文件：250.87 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
P-Channel30-V(D-S)MOSFETs 文件：42.19 Kbytes Page：4 Pages | VishayVishay Siliconix 威世科技 | | | |
P-ChannelEnhancementModeSwitch 文件：87.38 Kbytes Page：2 Pages | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
MILITARYGRADE,14PIN,10TAPTTLACTIVES [POLARA] MILITARYGRADE,14PIN,10TAPTTLACTIVES | ETC1List of Unclassifed Manufacturers 未分类制造商 | | | |
Semi-regulatedoutputforbusstability 文件：4.7918 Mbytes Page：14 Pages | SynQor SynQor，Inc. |  | | |
Semi-regulatedoutputforbusstability 文件：4.07405 Mbytes Page：14 Pages | SynQor SynQor，Inc. | | | |
WirewoundResistors,IndustrialPower,SiliconeCoated,AdjustableEdgewoundTubular 文件：178.88 Kbytes Page：6 Pages | VishayVishay Siliconix 威世科技 | | | |
WirewoundResistors,IndustrialPower,VitreousCoated 文件：176.54 Kbytes Page：5 Pages | VishayVishay Siliconix 威世科技 | | |
VP0300产品属性
- 类型
描述
- 型号
VP0300
- 功能描述
MOSFET 30V 3A 6.25W
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
SILICONIX |
2020+ |
原厂封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
SILICONIX |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
|||||
2023+ |
3000 |
进口原装现货 |
|||||
SIL |
2020+ |
CAN3 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
21+ |
NA |
99999 |
原装正品价格优惠 |
||||
SILICONIX |
20+ |
TO-92 |
2000 |
原装正品代理渠道价格优势 |
|||
SI |
22+ |
模块 |
6868 |
原装现货,可开13%税票 |
|||
SILICON |
23+ |
CAN3 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
VISHAY |
18+ |
TO-92 |
85600 |
保证进口原装可开17%增值税发票 |
|||
SIL |
22+ |
CAN |
12245 |
现货,原厂原装假一罚十! |
VP0300芯片相关品牌
VP0300规格书下载地址
VP0300参数引脚图相关
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VP0300数据表相关新闻
VOS627A-4X001T
VOS627A-4X001T
2023-5-31VP1-0059-R原装原标原厂现货
VP1-0059-R原装原标原厂现货
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VOS617A-7X001T
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VOS617A-4T
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VP706SESA/T
2021-10-20VP2-0216，VP20V8EPC-25，VP211ACG
VP2-0216，VP20V8EPC-25，VP211ACG
2020-4-12
DdatasheetPDF页码索引
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