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UPD65价格
参考价格：￥15.2071
型号：UPD65881GB-132-3BS-A 品牌：Renesas 备注：这里有UPD65多少钱，2024年最近7天走势，今日出价，今日竞价，UPD65批发/采购报价，UPD65行情走势销售排行榜，UPD65报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
UPD65 | 4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION TheµPD64Aand65featurelow-voltage2.0Voperation,andincorporateacarriergeneratorforinfraredremotecontroltransmission,astandbyreleasefunctionthroughkeyentry,andaprogrammabletimer,makingthemidealforinfraredremotecontroltransmitters.Aone-timePROMpr | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
3-MICROON CMOS GATE ARRAYS Description TheμD65000(CMOS-2)seriesofgatearraysarelow-power,high-speeddevicesfeaturing3-micronsilicongateCMOStechnology.Thebasiccellonthechipconsistsoffourtransistors,twoP-channelandtwoN-channel,withdouble-layermetalInterconnects. Features | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3-MICROON CMOS GATE ARRAYS Description TheμD65000(CMOS-2)seriesofgatearraysarelow-power,high-speeddevicesfeaturing3-micronsilicongateCMOStechnology.Thebasiccellonthechipconsistsoffourtransistors,twoP-channelandtwoN-channel,withdouble-layermetalInterconnects. Features | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
3-MICROON CMOS GATE ARRAYS Description TheμD65000(CMOS-2)seriesofgatearraysarelow-power,high-speeddevicesfeaturing3-micronsilicongateCMOStechnology.Thebasiccellonthechipconsistsoffourtransistors,twoP-channelandtwoN-channel,withdouble-layermetalInterconnects. Features | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
C-MOS MULTI FUNCTION GATE C-MOSMULTIFUNCTIONGATE | ETC1List of Unclassifed Manufacturers 未分类制造商 |  | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
UPD65000 (CMOS-3) SERIES 2-MICRON CMOS GATE ARRAYS DESCRIPTION TheμPD65000(CMOS-3)seriesofgatearraysarelow-power,high-speeddevicesfeaturing2-micronsilicongateCMOStechnology. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
CMOS-6/6A/6V/6X 1.0-MICRON CMOS GATE ARRAYS Description NECsCMOS-6gatearrayfamilies(CMOS-6,CMOS-6A,CMOS-6VandCMOS-6X)areultra-highperformance,sub-microneffectivechannellengthCMOSproductscreatedforhigh-integrationASICapplications. | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit FEATURES •Threeindependentlyoperated16-bitcounters •Sixcountmodesforeachcounter •Binary/BCDcountoperation •Single5V±10powersupply •Multiplelatchcommandsforeasymonitoring •Countrate:0(DC)−33MHz •Industrialtemperaturerange(Ambient):−40to85°C •44-pinQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOS Integrated Circuit FEATURES •Threeindependentlyoperated16-bitcounters •Sixcountmodesforeachcounter •Binary/BCDcountoperation •Single5V±10powersupply •Multiplelatchcommandsforeasymonitoring •Countrate:0(DC)−33MHz •Industrialtemperaturerange(Ambient):−40to85°C •44-pinQFP | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit FEATURES •Synchronousoperation •Oneortwosynchronouscharacters •Internal/externalsynchronization •AutomaticSYNCcharacterinsertion •Asynchronousoperation •Clockrate(baudrate):×1,×16,or×64 −Sendstopbits:1,1.5,or2bits −Breaktransmission −Automaticbreakdetec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit FEATURES •Synchronousoperation •Oneortwosynchronouscharacters •Internal/externalsynchronization •AutomaticSYNCcharacterinsertion •Asynchronousoperation •Clockrate(baudrate):×1,×16,or×64 −Sendstopbits:1,1.5,or2bits −Breaktransmission −Automaticbreakdetec | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit FEATURES •Three8-bitI/Oports •Threeprogrammableoperationmodes •Bitmanipulationcommand •Microcontroller-compatible •No-waitoperation •CMOStechnology •Singlepowersupply:5V±10 •Industrialtemperaturerange(Ambient):–40to85°C •44-pinQFPpackage •RoHS-compliant | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit FEATURES •Three8-bitI/Oports •Threeprogrammableoperationmodes •Bitmanipulationcommand •Microcontroller-compatible •No-waitoperation •CMOStechnology •Singlepowersupply:5V±10 •Industrialtemperaturerange(Ambient):–40to85°C •44-pinQFPpackage •RoHS-compliant | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS INTEGRATED CIRCUIT FEATURES •DirectconnectiontoanyMIPSR4x00CPUwitha32-bitSysADbus •Directconnectionto32-bit33MHzPCIbus,conformingtoRev.2.1 •IntegratedPCIarbiteractingasPCImasterortarget •IndependentCPUandPCIinputclocks •Internal‘cache’forlocalmemorylocationsprovides | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION DESCRIPTION TheµPD64Aand65featurelow-voltage2.0Voperation,andincorporateacarriergeneratorforinfraredremotecontroltransmission,astandbyreleasefunctionthroughkeyentry,andaprogrammabletimer,makingthemidealforinfraredremotecontroltransmitters.Aone-timePROMpr | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS INTEGRATED CIRCUIT FEATURES •Programmemory(ROM) •mPD64A:1002´10bits •mPD65:2026´10bits •Datamemory(RAM):32´4bits •On-chipcarriergeneratorforinfraredremotecontrol •9-bitprogrammabletimer:1channel •Instructionexecutiontime:16ms(whenoperatingatfX=4MHz:ceramicoscillat | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
AUTOMOTIVE CLOCK CMOS LSI 文件：431.18 Kbytes Page：6 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit 文件：75.91 Kbytes Page：8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit 文件：75.91 Kbytes Page：8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit 文件：76.27 Kbytes Page：8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit 文件：76.27 Kbytes Page：8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit 文件：75.94 Kbytes Page：8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS Integrated Circuit 文件：75.94 Kbytes Page：8 Pages | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
UPD65产品属性
- 类型
描述
- 型号
UPD65
- 制造商
NEC
- 制造商全称
NEC
- 功能描述
4-BIT SINGLE-CHIP MICROCONTROLLER FOR INFRARED REMOTE CONTROL TRANSMISSION
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
20+ |
DIP20 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
SSCP |
21+ |
SSCP |
9852 |
只做原装正品假一赔十!正规渠道订货! |
|||
NEC |
QFP |
23770 |
诚心经营 原盒原标 正品现货 价格美丽假一罚十 |
||||
NEC |
23+ |
DIP |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
NEC |
2023+ |
TQFP-48P |
53500 |
正品,原装现货 |
|||
SSCP |
21+ |
SSCP |
9852 |
只做原装正品假一赔十!正规渠道订货! |
|||
RENESAS/瑞萨 |
23+ |
QFP |
90000 |
只做原装 ！全系列供应可长期供货稳定价格优势！ |
|||
NEC |
21+ |
DIP |
100000 |
原厂订货价格优势,可开13%的增值税票 |
|||
NEC |
22+23+ |
DIP-16 |
36286 |
绝对原装正品全新进口深圳现货 |
|||
NEC |
0028+ |
QFP |
50000 |
深圳现货 |
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 地址：深圳市福田区中航路42号中航北苑大厦A座6A2 型号：UPD30181AYF1-131-GA3-A 品牌：Renesas 包装：50 封装：BGA240
2021-9-3UPD720114GA-YEU-AT
UPD720114GA-YEU-AT，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD720114GA-9EU-A
UPD720114GA-9EU-A，当天发货0755-82732291全新原装现货或门市自取.
2020-11-22UPD16818GR-8JG-步进电机控制器/驱动器
描述该mPD16818是单片双H桥驱动器集成电路，它使用其输出级N沟道功率MOS场效应管。通过雇用输出级的功率MOS场效应晶体管，该驱动电路的电压和饱和度大幅提高功耗比传统的驱动电路，使用双极晶体管。此外，驱动电流可以调节，在节电模式下使用外部电阻器。因此，该mPD16818作为一个两相励磁驱动电路的理想，双极步进电机驱动头执行器的一个FDD。特征•兼容电源电压3V-/5V-•引脚兼容与mPD16803•低（顶部和底部的ON电阻马鞍山FET的总和）ON电阻R
2013-2-5UPD16813-整体式双H桥驱动器电路
描述该mPD16813是单片双H桥驱动电路，在它的驱动级功率MOS场效应管。通过补充P通道和N通道的输出级，电路电流大幅inproved相对于传统电荷泵驱动程序。该mPD16813因此作为2相励磁驱动电路的理想，双极步进电机驱动头部的一个FDD驱动器。特征•低（顶部和底部的ON电阻晶体管的总和）ON电阻RON的典型值=2.0瓦特。•低电流消耗：国际直拨电话=100mA最大。•降噪电路，操作时INC已关闭。•小型表面贴装封装：16引脚SOP的塑
2013-2-5
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