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位置：首页 > IC中文资料第524页 > UPD43256B

型号 功能描述 生产厂家&企业 LOGO 操作
UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

文件：224.55 Kbytes Page：28 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

文件：231.03 Kbytes Page：24 Pages

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256

32,768x8-BITSTATICMIX-MOSRAM

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B-A

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B-AXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B-AXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B-B

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256B-BXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256B-BXXX

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BCZ-70L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BCZ-70LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BCZ-85L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BCZ-85LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-70L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-70L

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-70L-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-70LL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-70LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-70LL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85L

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85L

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-85L-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85LL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-85LL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-85LL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A10

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A10

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-A10-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A12

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A12

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-A12-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A85

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-A85

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-A85-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B10

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-B10-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B12

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B12

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGU-B12-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGU-B15

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70LL-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70LL-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70LL-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70LL-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70X-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-70X-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70X-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-70X-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85LL-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85LL-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85LL-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120ns(MAX.) •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5V) •LowVCCdataretention:2.0V(MIN.) •/OEinputforeasyapplication

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85LL-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85X-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-85X-9JL

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85X-9JL-A

MOSINTEGRATEDCIRCUIT

Features •32,768wordsby8bitsorganization •Fastaccesstime:70,85,100,120,150ns(MAX.) •Operatingambienttemperature:TA=–25to+85°C •Lowvoltageoperation(Aversion:VCC=3.0to5.5V,Bversion:VCC=2.7to5.5 •LowVCCdataretention:2.0V(MIN.) •/OEinputforea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS
UPD43256BGW-85X-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BITEXTENDEDTEMPERATUREOPERATION

Description TheμPD43256B-Xisahighspeed,lowpower,and262,144bits(32,768wordsby8bits)CMOSstaticRAM. TheμPD43256B-Xisanextended-operating-temperatureversionoftheμPD43256B(Xversion:TA=–25to+85°C).AndAandBversionsarelowvoltageoperations.Batterybackupisava

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-A10-9JL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC
UPD43256BGW-A10-9KL

256K-BITCMOSSTATICRAM32K-WORDBY8-BIT

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

UPD43256B产品属性

  • 类型

    描述

  • 型号

    UPD43256B

  • 制造商

    NEC Electronics Corporation

UPD43256B供应商更多...

更新时间：2024-4-20 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市百视威讯电子科技有限公司
UPD43256BGU-85L-E2
23+
N/A
38460
正品授权货源可靠
询价
深圳市弘为电子有限公司
UPD43256BGU-70LL-E2-A
RENESASNE
22+
NA
30000
100%全新原装 假一赔十
询价
千层芯半导体(深圳)有限公司
UPD43256BGU-85L
NEC
17+
原厂原封
3000
只做原装
询价
深圳市科恒伟业电子有限公司
UPD43256BGX-85LL-EJA
NEC
1950+
TSOP32
4856
只做原装正品现货!或订货假一赔十!
询价
深圳市昌和盛利电子有限公司
UPD43256BCZ-70L
NEC
23+
DIP
28610
询价
深圳市宏捷佳电子科技有限公司
UPD43256BGX-B12-EJA
NEC
2023+
TSSOP-32
50000
原装现货
询价
深圳市宇创芯科技有限公司
UPD43256BGU-70Y-E2
RENESAS/瑞萨
22+
SOP28
9600
原装现货,优势供应,支持实单!
询价
上海鑫科润电子科技有限公司
UPD43256BGW-A85X-9JL
NEC
01+
TSOP-28
94
原装现货海量库存欢迎咨询
询价
深圳市得捷芯城科技有限公司
UPD43256BGW-B12X-9JL-E3
NEC
23+
NA/
11250
原厂直销,现货供应,账期支持!
询价
深圳市锦喆鸿电子有限公司
UPD43256BGU-70L
NEC
21+
SOP28
12588
原装正品,自己库存
询价

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