型号 功能描述 生产厂家&企业 LOGO 操作
T14L10

Dual-In-Line,10Bit

Dual-In-Line,10Bit R/2RLadderNetworks APPLICATIONS   10Bit,R/2RLaddernetworksforD/AandA/Dconverterwithbi-polarorCMOSswitches

VishayVishay Siliconix

威世科技

Vishay

Dual-In-Line,10Bit

Dual-In-Line,10Bit R/2RLadderNetworks APPLICATIONS   10Bit,R/2RLaddernetworksforD/AandA/Dconverterwithbi-polarorCMOSswitches

VishayVishay Siliconix

威世科技

Vishay

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Aisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Aisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Aisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Aisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Aisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Aisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

128KX8HIGHSPEEDCMOSSTATICRAM

GENERALDESCRIPTION TheT14L1024Nisaone-megabitdensity,faststaticrandomaccessmemoryorganizedas131,072wordsby8bits.Itisdesignedforuseinhighperformancememoryapplicationssuchasmainmemorystorageandhighspeedcommunicationbuffers.FabricatedusinghighperformanceC

TMTTaiwan Memory Technology

Taiwan Memory Technology

TMT

ProgammableArrayLogicSeries24(PALSeries24)

文件:448.59 Kbytes Page:14 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

ProgammableArrayLogicSeries24(PALSeries24)

文件:448.59 Kbytes Page:14 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

ProgammableArrayLogicSeries24(PALSeries24)

文件:448.59 Kbytes Page:14 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

ProgammableArrayLogicSeries24(PALSeries24)

文件:448.59 Kbytes Page:14 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

ProgammableArrayLogicSeries24(PALSeries24)

文件:448.59 Kbytes Page:14 Pages

NSCNational Semiconductor (TI)

美国国家半导体美国国家半导体公司

NSC

T14L10产品属性

  • 类型

    描述

  • 型号

    T14L10

  • 制造商

    VISHAY

  • 制造商全称

    Vishay Siliconix

  • 功能描述

    Dual-In-Line, 10 Bit

更新时间:2024-4-25 18:37:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TMT
21+
TSSOP
200
原装现货。假一赔十
TMTECH
2016+
SOJ
4000
只做原装,假一罚十,公司可开17%增值税发票!
TMT
23+
NA/
4280
原厂直销,现货供应,账期支持!
TMTECH
2016+
SOJ32
6528
只做进口原装现货!假一赔十!
TECH
21+
SOJ
20000
原厂订货价格优势,可开13%的增值税票
TMTECH
21+
SOJ
10800
只做原装 欢迎咨询
TMT
2023+
TSSOP32
3875
全新原厂原装产品、公司现货销售
TMTECH
22+23+
TSOP
35771
绝对原装正品全新进口深圳现货
TMT
22+
TSSOP
3000
原装正品,支持实单
TMTECA
01+
SOJ/32
22
原装现货海量库存欢迎咨询

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