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SPD04N60S5价格
参考价格：￥4.0821
型号：SPD04N60S5 品牌：Infineon 备注：这里有SPD04N60S5多少钱，2024年最近7天走势，今日出价，今日竞价，SPD04N60S5批发/采购报价，SPD04N60S5行情走势销售排行榜，SPD04N60S5报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPD04N60S5 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SPD04N60S5 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPD04N60S5 | N-ChannelMOSFETTransistor 文件：335.62 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
SPD04N60S5 | PowerMOSFET 文件：1.07853 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-Channel650V(D-S)PowerMOSFET 文件：2.1288 Mbytes Page：10 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
N-ChannelMOSFETTransistor 文件：335.62 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | |
SPD04N60S5产品属性
- 类型
描述
- 型号
SPD04N60S5
- 功能描述
MOSFET COOL MOS N-CH 600V 4.5A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO-252 |
6600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
蓝箭 |
1942+ |
TO-252 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
INFINEON |
20+ |
TO-252 |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINEON |
360000 |
原厂原装 |
1305 |
||||
INFINEON |
23+ |
TO252 |
8820 |
全新原装优势 |
|||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
|||
INFINEON |
TO-252 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
INFINEON |
2022+ |
TO-252 |
57550 |
||||
INFINEON |
22+23+ |
TO252 |
74641 |
绝对原装正品现货,全新深圳原装进口现货 |
|||
INFINEON/英飞凌 |
TO251 |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
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SPD04N60S5规格书下载地址
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