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SPA11N60C3价格
参考价格：￥9.1510
型号：SPA11N60C3 品牌：Infineon Technologies 备注：这里有SPA11N60C3多少钱，2024年最近7天走势，今日出价，今日竞价，SPA11N60C3批发/采购报价，SPA11N60C3行情走势销售排行榜，SPA11N60C3报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SPA11N60C3 | iscN-ChannelMOSFETTransistor •FEATURES •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   |
SPA11N60C3 | CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | |
SPA11N60C3 | N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | |
SPA11N60C3 | CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：659.64 Kbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SPA11N60C3 | CoolMOS??PowerTransistor 文件：662.11 Kbytes Page：15 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perfor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology 文件：659.64 Kbytes Page：16 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •Ultralowgatecharge •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.38Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perform | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel650V(D-S)MOSFET 文件：1.84713 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | |
SPA11N60C3产品属性
- 类型
描述
- 型号
SPA11N60C3
- 功能描述
MOSFET COOL MOS N-CH 600V 11A
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
2016+ |
TO220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
|||
INFINEO |
2020+ |
原厂原装正品 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
Infineon Technologies |
23+ |
PG-TO220-3-31 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON |
2019 |
TO-220F |
19700 |
INFINEON品牌专业原装优质 |
|||
INFINEON |
23+ |
TO-220F |
20000 |
原厂原装正品现货 |
|||
INFIN |
1436+ |
N |
30000 |
绝对原装进口现货可开增值税发票 |
|||
INFINEO |
2021+ |
原厂原封装 |
93628 |
原装进口现货 假一罚百 |
|||
INFINEON/英飞凌 |
22+ |
TO-220F |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
INFINEON/英飞凌 |
2021+ |
TO-220F |
12000 |
勤思达 只做原装 现货库存 |
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SPA11N60C3规格书下载地址
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SPA11N60C3数据表相关新闻
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https://hch01.114ic.com/
2020-11-13SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
SPB100N032L-03，SPB100N04S2L-03，SPB11N60C2，SPB11N60S5E3045A，SPB160N04S2-03，SPB20N60C3E3045A，SPB80N03S2L-03，SPB80N03S2L05，SPB80N03S2L-05，SPB80N06S2L-05，SPB80P06P，SPP02N60S5，SPP04N60C2
2019-12-16SPB17N80C3BSZ520N15NS3G特价热销
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2019-8-6SPA07N60C3
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2019-4-24SPA20N60CFD-CoolMOS功率晶体管
特点•新的革命高电压技术•内在的快速恢复体二极管•极低的反向恢复电荷•超低栅极电荷•至尊的dv/dt的额定•高峰值电流能力•定期雪崩额定•合格的为工业级应用根据JEDEC0）•无铅引脚电镀，符合RoHS标准
2012-11-10
DdatasheetPDF页码索引
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