位置：首页 > IC中文资料第7947页 > RFP10N12
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
RFP10N12 | N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State |  |   |
RFP10N12 | N-ChannelEnhancement-ModePowerField-EffectTransistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 |  | |
RFP10N12 | N-ChannelEnhancement-ModePowerField-EffectTransistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=120V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.3Ω(Max)@VGS=5V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-CHANNELENHANCEMENT-MODEPOWERFIELD-EFFECTTRANSISTORS N-ChannelEnhancement-ModePowerField-EffectTransistors Features ■SOAispower-dissipationlimited ■Nanosecondswitchingspeeds ■Lineartransfercharacteristics ■Highinputimpedance ■Majoritycarrierdevice | GESSGE Solid State GE Solid State | | | |
N-ChannelEnhancement-ModePowerField-EffectTransistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | | |
N-ChannelEnhancement-ModePowerField-EffectTransistors 文件：89.46 Kbytes Page：2 Pages | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | | |
RFP10N12产品属性
- 类型
描述
- 型号
RFP10N12
- 制造商
GESS
- 制造商全称
GESS
- 功能描述
N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
F |
2020+ |
TO-220A |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
F |
23+ |
TO-220AB |
6000 |
原装正品，支持实单 |
|||
FAIRCHILD/仙童 |
24+ |
TO220 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
HARRIS(哈利斯) |
20+ |
TO-220-3 |
3000 |
||||
HARRIS |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
|||
INTERSIL/FSC |
23+ |
TO-220 |
28610 |
||||
INTESIL |
23+ |
TO-220 |
8000 |
专做原装正品,假一罚百! |
|||
Harris |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
VBSEMI |
19+ |
TO-220AB |
29600 |
绝对原装现货,价格优势! |
|||
FSC |
T0-220 |
9907 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
RFP10N12芯片相关品牌
RFP10N12规格书下载地址
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- RFN25C1
- RFN25C
- RFN1L7S
RFP10N12数据表相关新闻
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?RFP18N08，全新原装当天发货或门市自取0755-82732291.
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可立即发货
2019-9-24
DdatasheetPDF页码索引
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