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RFD3055价格
参考价格:¥1.7163
型号:RFD3055LE 品牌:Fairchild 备注:这里有RFD3055多少钱,2024年最近7天走势,今日出价,今日竞价,RFD3055批发/采购报价,RFD3055行情走势销售排行榜,RFD3055报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
RFD3055 | 11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
RFD3055 | 12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
RFD3055 | 12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
RFD3055 | 12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS HARRIS corporation | ||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-ChannelLogicLevelPowerMOSFET TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | |||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs) Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor | HARRIS HARRIS corporation | |||
12A,60V,0.150Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
N-Channel60V(D-S)MOSFET 文件:960.61 Kbytes Page:7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel60V(D-S)MOSFET 文件:1.00467 Mbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
WASHERSANDNUTS [KEYSTONE] FIBRESHOULDERWASHERS HEXMACHINENUTS NYLONSHOULDERWASHER/BUSHINGS BLINDCAPTIVENUTS-PRESSFIT METRICMACHINENUTS | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs MULTIPLEXEDTWO-WIREHALL-EFFECTSENSORICs TheUGN3055UHall-effectsensorisadigitalmagneticsensingICcapableofcommunicatingoveratwo-wirepower/signalbus.Usingasequentialaddressingscheme,thedevicerespondstoasignalonthebusandreturnsthediagnosticstatusoftheIC,as | Allegro Allegro MicroSystems | |||
CustomerSpecification Construction 1)Component11X1HOOKUP a)Conductor18(16/30)AWGTinnedCopper0.047 b)Insulation0.016Wall,Nom.PVC0.079+/-0.002 (1)Print ALPHAWIREE163869-*RUAWMSTYLES1569105C OR100780C300VVW-1IEC60332-118AWG ORCRUTR-6490CFT1CEROHS {0}*=FactoryCode | ALPHAWIREAlpha Wire 阿尔法电线 | |||
N-Channel30-V(D-S)MOSFET 文件:959.93 Kbytes Page:8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
CustomerSpecification 文件:70.18 Kbytes Page:3 Pages | ALPHAWIREAlpha Wire 阿尔法电线 |
RFD3055产品属性
- 类型
描述
- 型号
RFD3055
- 功能描述
MOSFET Power MOSFET N-Ch 60V/12a/0.150 Ohm
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
21+ |
TO-252 |
1498 |
原装现货库存 |
|||
onsemi |
23+ |
I-PAK |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
FAIRCHILD |
360000 |
原厂原装 |
1305 |
||||
FAIRCHILD |
21+ |
TO252 |
3374 |
绝对原装正品现货,假一罚十 |
|||
FAIRCHILD |
22+ |
TO-252 |
8334 |
全新原装正品 现货 优势供应 |
|||
FAIRCHILD |
23+ |
TO-251 |
8600 |
全新原装现货 |
|||
FAIRCHILD |
20+ |
TO-252 |
11520 |
特价全新原装公司现货 |
|||
FSC进口原 |
22+ |
TO-252 |
900 |
长源创新-只做原装---假一赔十 |
|||
onsemi(安森美) |
23+ |
DPAK-3 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
ONSEMI |
23/22+ |
TO252 |
2000 |
全线可订货.含税开票 |
RFD3055规格书下载地址
RFD3055参数引脚图相关
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DdatasheetPDF页码索引
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