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PF价格
参考价格：￥15.4196
型号：PF0001/28 品牌：Keystone 备注：这里有PF多少钱，2024年最近7天走势，今日出价，今日竞价，PF批发/采购报价，PF行情走势销售排行榜，PF报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
PF | Compliant with European standards 1a/1c 6A Slim power relays 文件：77.37 Kbytes Page：5 Pages | PANASONICBATTERYPanasonic Battery Group 松下电器松下电器（中国）有限公司 |  |   |
Axial Leaded Hermetically Sealed Fast Rectifier Diode Description Quickreferencedata VR=800&1000V IF=1.8A trr=300nS IR=1µA Features ◆Lowreverserecoverytime ◆Glasspassivatedforhermeticsealing ◆Lowswitchinglosses ◆Soft,non-snapoff,recoverycharacteristic ◆Avalanchecapability | SEMTECH Semtech Corporation |  | | |
MOS FET Power Amplifier Module for AMPS Handy Phone Features •Lowvoltageoperation:4.6V •2stageamplifier:+8dBminput •Leadlesssmallpackage:0.2cc •Highefficiency:48Typat1W •Lowpowercontrolcurrent:500µATyp | HitachiHitachi, Ltd. 日立公司 |  | | |
MOS FET Power Amplifier Features •Highstability:LoadVSWR=20:1 •Lowpowercontrolcurrent:400µA •Thinpackage:5mmt | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for Mobile Phone MOSFETPowerAmplifierModuleforMobilePhone Features •Highstability:LoadVSWR≈20:1 •Lowpowercontrolcurrent:400µA •Thinpackage:5mmt Application PF0031:ForNMT900890to925MHz | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Features •Highstability:LoadVSWR=20:1 •Lowpowercontrolcurrent:400µA •Thinpackage:5mmt | HitachiHitachi, Ltd. 日立公司 | | | |
14 channel configurable power management integrated circuit TheSMARTMOSPF0100ZAECQ100grade2automotivepowermanagement integratedcircuit(PMIC)providesahighlyprogrammable/configurable architecture,withfullyintegratedpowerdevicesandminimalexternal components.Withuptosixbuckconverters,sixlinearregulators,RTCsupply, andcoi | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 |  | | |
MOS FET Power Amplifier Module for GSM Mobile Phone Features •Lowpowercontrolcurrent:0.9mATyp •Highspeedswitching:1.5µsecTyp •Widepowercontrolrange:100dBTyp Application ForGSMCLASS2890to915MHz | HitachiHitachi, Ltd. 日立公司 | | | |
MOSFET POWER AMPLIFIER MODULE FOR GSM HANDY PHONE MOSFETPowerAmplifierModuleforGSMHandyPhone | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for GSM Handy Phone Features •4.8Voperation2stageamplifier •Smallpackage •Highefficiency:45Typ •Highspeedswitching:1µsec Application •ForGSMclass4890to915MHz | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for GSM Handy Phone Features •4.8Voperation2stageamplifier •Smallpackage •Highefficiency:45Typ •Highspeedswitching:1µsec Application •ForGSMclass4890to915MHz | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM Handy Phone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat3.8W •Widegaincontrolrange:90dBTyp Application •ForE-GSMclass4880to915MHz •For4.8Vnominalbatteryuse | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM Handy Phone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat3.8W •Widegaincontrolrange:90dBTyp Application •ForE-GSMclass4880to915MHz •For4.8Vnominalbatteryuse | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM Handy Phone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat35.5dBm •Widegaincontrolrange:70dBTyp Application •ForE-GSMclass4880to915MHz •For3.5Vnominalbatteryuse | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM Handy Phone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat3.8W •Widegaincontrolrange:90dBTyp Application •ForGSMclass4890to915MHz •For5.5VnominalDC/DCconverteruse | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM Handy Phone Features •Highgain3stageamplifier:0dBminput •Leadlessthin&Smallpackage:2mmMax,0.2cc •Highefficiency:45Typat3.8W •Widegaincontrolrange:90dBTyp Application •ForGSMclass4890to915MHz •For5.5VnominalDC/DCconverteruse | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for ADC Mobile Phone Features •Highefficiency:34TypforCW 30Typforπ/4-DQPSK •Lowinputpower:0dBmave.Typforπ/4-DQPSK •Simplebiascircuit •Highspeedswitching:8µsTyp | HitachiHitachi, Ltd. 日立公司 | | | |
40-860 MHz. Ultra-linear Opto Receiver Amplifier 40-860MHz.Ultra-linearOptoReceiverAmplifier Features UltraHighLinearitywithLowNoise IndependentDCSupplypinforOpticaldiode(PFO4Model) | MACOM Tyco Electronics |  | | |
MOS FET Power Amplifier Module for VHF Band Features •Smallpackage:30×10×5.9mm •Highefficiency:55Typ •Lowpowercontrolcurrent:0.5mAMax | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for VHF Band Features •Smallpackage:30×10×5.9mm •Highefficiency:50Typ •Lowpowercontrolcurrent:0.5mAMax Application VHFBand150to174MHz | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for VHF Band MOSFETPowerAmplifierModuleforVHFBand Features •Smallpackage:30×10×5.9mm •Lowoperationvoltage:7Wat7.2V •Highefficiency:55Typ •Lowpowercontrolcurrent:0.5mAMax | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for VHF Band MOSFETPowerAmplifierModuleforVHFBand Features •Smallpackage:30×10×5.9mm •Lowoperationvoltage:7Wat7.2V •Highefficiency:55Typ •Lowpowercontrolcurrent:0.5mAMax | HitachiHitachi, Ltd. 日立公司 | | | |
EMI Filtering TVS For USB Port EMIFilteringTVSForUSBPort FEATURES EMI/RFIfiltering. ESDProtectiontoIEC61000-4-2Level4. Lowinsertionloss. Goodattenuationofhighfrequencysignals. Lowclampingvoltage. Lowoperatingandleakagecurrent. | KECKEC CORPORATION KEC株式会社 |  | | |
MOS FET Power Amplifier Module Features •Smallpackage:30×10×5.9mm •Highefficiency:43Typat9.6V 40Typat4.8V •Lowpowercontrolcurrent:150µATyp | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for UHF Band Features •Smallpackage:30×10×5.9mm •Highoutputpoweratlowvoltage:2WTypat4.8V •Lowpowercontrolcurrent:200µATyp | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for UHF Band Features •Smallpackage:30×10×5.9mm •Highoutputpoweratlowvoltage:2WTypat4.8V •Lowpowercontrolcurrent:200µATyp | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for UHF Band Features •Smallpackage:30×10×5.9mm •Highoutputpoweratlowvoltage:2WTypat4.8V •Lowpowercontrolcurrent:200µATyp | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for UHF Band Features •Smallpackage:30×10×5.9mm •Highoutputpoweratlowvoltage:2WTypat4.8V •Lowpowercontrolcurrent:200µATyp | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for UHF Band Features •Smallpackage:30×10×5.9mm •Highoutputpoweratlowvoltage:2WTypat4.8V •Lowpowercontrolcurrent:200µATyp | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone Features •3stageamplifier •Smallpackage:0.2cc •Highefficiency:45Typ •Highspeedswitching:0.9µsec Application ForDCS1800class11710to1785MHz. | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for DCS 1800 Handy Phone Features •3stageamplifier •Smallpackage:0.2cc •Highefficiency:45Typ •Highspeedswitching:0.9µsec Application ForDCS1800class11710to1785MHz. | HitachiHitachi, Ltd. 日立公司 | | | |
SMT Power Inductors Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH | pulse Pulse Electronics |  | | |
SMT Power Inductors Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH | pulse Pulse Electronics | | | |
SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING SINGLE-PHASEFULLWAVEBRIDGE1.5AMPERESTHROUGH5.0AMPERESFORP.C.BOARDANDPOWERTERMINALMOUNTING | edi edi |  | | |
SMT Power Inductors Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH | pulse Pulse Electronics | | | |
SMT Power Inductors Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH | pulse Pulse Electronics | | | |
SMT Power Inductors Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH | pulse Pulse Electronics | | | |
SMT Power Inductors Height:1.8mmMax Footprint:4.3mmx4.3mmMax CurrentRating:upto1.5A InductanceRange:0.7μHto220μH | pulse Pulse Electronics | | | |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone MOSFETPowerAmplifierModule forE-GSM900andDCS1800DualBandHandyPhone Features •1in/2outdualbandamplifier •Simpleexternalcircuitincludingoutputmatchingcircuit •Simplebandswitchingandpowercontrol •Highgain3stageamplifier:+4.5dBminput • | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM900 and DCS1800 Dual Band Handy Phone MOSFETPowerAmplifierModule forE-GSM900andDCS1800DualBandHandyPhone Features •1in/2outdualbandamplifier •Simpleexternalcircuitincludingoutputmatchingcircuit •Simplebandswitchingandpowercontrol •Highgain3stageamplifier:+1dBminputforGS | HitachiHitachi, Ltd. 日立公司 | | | |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone Features •Allinoneincludingoutputmatchingcircuit •Simpleexternalcircuit •Simplepowercontrol •Highgain3stageamplifier:0dBminputTyp •Leadlessthin&Smallpackage:8.0×10.0mmTyp×1.5mmMax •Highefficiency:55Typat35.0dBmforE-GSM 47Typat32.5dBmforD | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | | |
MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone Features •Allinoneincludingoutputmatchingcircuit •Simpleexternalcircuit •Simplepowercontrol •Highgain3stageamplifier:0dBminputTyp •Leadlessthin&Smallpackage:8.0×10.0mmTyp×1.5mmMax •Highefficiency:55Typat35.0dBmforE-GSM | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone Features •Allinoneincludingoutputmatchingcircuit •Simpleexternalcircuit •Simplepowercontrol •Highgain3stageamplifier:0dBminputTyp •Leadlessthin&Smallpackage:8.0×10.0×1.5mmMax •Highefficiency 47Typat33.5dBmforGSM850 47Typat32.5dBmforDCS1 | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING SINGLE-PHASEFULLWAVEBRIDGE1.5AMPERESTHROUGH5.0AMPERESFORP.C.BOARDANDPOWERTERMINALMOUNTING | edi edi | | | |
SINGLE-PHASE FULL WAVE BRIDGE 1.5AMPERES THROUGH 5.0 AMPERES FOR P.C. BOARD AND POWER TERMINAL MOUNTING SINGLE-PHASEFULLWAVEBRIDGE1.5AMPERESTHROUGH5.0AMPERESFORP.C.BOARDANDPOWERTERMINALMOUNTING | edi edi | | | |
PFHC module 500W, 1000W PFHCmodule500W,1000W Features CEmarking(LowVoltageDirective) PFHCmodule ConformstoIEC1000-3-2 Highpowerfactor:0.95,highefficiency:90 Input:85~265VAC Output:500,1000W Widebaseplatetemperature:–20~+85°CConductioncooling Providedi | LAMBDADENSEI-LAMBDA DENSEI-LAMBDA |  | | |
PFHC module 500W, 1000W PFHCmodule500W,1000W Features CEmarking(LowVoltageDirective) PFHCmodule ConformstoIEC1000-3-2 Highpowerfactor:0.95,highefficiency:90 Input:85~265VAC Output:500,1000W Widebaseplatetemperature:–20~+85°CConductioncooling Providedi | LAMBDADENSEI-LAMBDA DENSEI-LAMBDA | | | |
Silicon Planar Type Diode ForEMIFilteringandESDProtection. FEATURES •EMI/RFIfiltering. •ESDProtectiontoIEC61000-4-2Level4. •Lowinsertionloss. •Goodattenuationofhighfrequencysignals. •Lowclampingvoltage. •Lowoperatingandleakagecurrent. •Fourelementsinonepackage APPLICATIONS •Ce | KECKEC CORPORATION KEC株式会社 | | | |
55 ?C Photoflash, High-Energy, Long Life, 500 V, Aluminum TypePF55°CPhotoflash,High-Energy,LongLife,500V,Aluminum HighEnergy,Long-Life Screw-TerminalsCaseStyle TypePFcanwithstandmorethan100,000fulldischargesintypicalphotoflashapplications,andTypePFalsodeliversthehigherenergydensitypossiblewitharatedvoltageof50 | CDE Cornell Dubilier Electronics |  | | |
55 ?C Photoflash, High-Energy, Long Life, 500 V, Aluminum TypePF55°CPhotoflash,High-Energy,LongLife,500V,Aluminum HighEnergy,Long-Life Screw-TerminalsCaseStyle TypePFcanwithstandmorethan100,000fulldischargesintypicalphotoflashapplications,andTypePFalsodeliversthehigherenergydensitypossiblewitharatedvoltageof50 | CDE Cornell Dubilier Electronics | | | |
55 ?C Photoflash, High-Energy, Long Life, 500 V, Aluminum TypePF55°CPhotoflash,High-Energy,LongLife,500V,Aluminum HighEnergy,Long-Life Screw-TerminalsCaseStyle TypePFcanwithstandmorethan100,000fulldischargesintypicalphotoflashapplications,andTypePFalsodeliversthehigherenergydensitypossiblewitharatedvoltageof50 | CDE Cornell Dubilier Electronics | | | |
1008 to 1512W Power Factor Correction Module Features •SuitableForDevelopingCustomSupplies •Upto96.5Efficient •CompactFullBrickPackage(116.8x61x12.7mm) •Upto100°CRatedBaseplateTemperature •ConductionCooledViaBaseplate Benefits •ModuleSolutionReducesRisk,TimeandCost •LessWasteHeattoManageand | TDKTDK Corporation 东电化（中国）投资有限公司 |  | | |
1008 to 1512W Power Factor Correction Module Features •SuitableForDevelopingCustomSupplies •Upto96.5Efficient •CompactFullBrickPackage(116.8x61x12.7mm) •Upto100°CRatedBaseplateTemperature •ConductionCooledViaBaseplate Benefits •ModuleSolutionReducesRisk,TimeandCost •LessWasteHeattoManageand | TDKTDK Corporation 东电化（中国）投资有限公司 | | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield |  | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield | | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield | | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield | | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield | | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield | | | |
Oven Controlled Crystal Oscillators 3.3V / 5.0V Series LVCMOS / HCMOS Series VCOCXO / OCXO 14PinDIPPackageOCXOSeries Description TheConnor-Winfield14PinDIPOvenStabilizedCrystalControlledOscillators(OCXO)seriesandVoltageControlledOvenStabilizedCrystalControlledOscillators(VCOCXO)seriesaredesignedforuseinapplicationsrequiringstabilitiesof+/-0.05ppmto | Connor-Winfield Connor-Winfield | | |
PF产品属性
- 类型
描述
- 型号
PF
- 制造商
PFANNENBERG
- 功能描述
FILTERFAN EMC 230V
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
22+ |
MicroPak-6 |
100000 |
代理渠道/只做原装/可含税 |
|||
OMRON |
23+ |
NA |
12068 |
代理欧姆龙传感器 |
|||
PADAUK/应广 |
23+ |
NA |
7825 |
原装正品!清仓处理! |
|||
NEC |
23+ |
NA/ |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ADI(亚德诺) |
23+ |
TO-92 |
907 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
NEC |
2022 |
SOT-89 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
MICRON |
22+ |
BGA |
7263 |
||||
ISAHAYA |
23+ |
SOT23-3 |
15000 |
全新原装现货,价格优势 |
|||
CYPRESS/赛普拉斯 |
2048+ |
QFN |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
TTI |
ROHS |
5632 |
2015 |
只做进口原装正品!现货或者订货一周货期!只要要网上 |
PF芯片相关品牌
PF规格书下载地址
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Switch-PCIe4Port4LanePCI接口IC,Bridge-PCIetoUSB2.0PCI接口IC,66MHz2.5VPCI接口IC,66MHz-40CPCI接口IC,I/OExpansionSwitch-PCIePCI接口IC,3Port4LanePCI接口IC
2020-8-14
DdatasheetPDF页码索引
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