DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES ■20V,6.5A,RDS(ON)=30mΩ@VGS=4.5V. RDS(ON)=43mΩ@VGS=2.5V. ■-20V,-4.8A,RDS(ON)=55mΩ@VGS=-4.5V. RDS(ON)=90mΩ@VGS=-2.5V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapabi

DualEnhancementModeFieldEffectTransistor(NandPChannel)

FEATURES 20V,6.5A,RDS(ON)=30mW@VGS=4.5V. RDS(ON)=43mW@VGS=2.5V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. SurfacemountPackage. -20V,-4.8A,RDS(ON)=55mW@VGS=-4.5V. RDS(ON)=90mW@VGS=-2.5V. Lead-freeplating;R

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