位置：首页 > IC中文资料第2360页 > NESG2031M05
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NESG2031M05 | NECsNPNSiGeHIGHFREQUENCYTRANSISTOR DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NESG2031M05 | NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NESG2031M05 | NPNSiGeHIGHFREQUENCYTRANSISTOR 文件：790.16 Kbytes Page：13 Pages | CEL California Eastern Laboratories |  | |
NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NECsNPNSiGeHIGHFREQUENCYTRANSISTOR DESCRIPTION NECsNESG2031M05isfabricatedusingNECshighvoltageSiliconGermaniumprocess(UHS2-HV),andisdesignedforawiderangeofapplicationsincludinglownoiseamplifiers,mediumpoweramplifiers,andoscillators. NECslowprofile,flatleadstyleM05Packageprovideshighfrequency | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGeRFTransistorforLowNoise,High-GainAmplification FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainatlowcurrentamplifications. ⎯NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz ⎯NF=1.3dBTYP.,Ga=10.0dBTYP.@VCE=2V,IC=5mA,f=5.2GHz •Maximumstablepowergain:MSG=21.5dBTY | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
NPNSiGeHIGHFREQUENCYTRANSISTOR 文件：790.16 Kbytes Page：13 Pages | CEL California Eastern Laboratories | | | |
NPNSiGeHIGHFREQUENCYTRANSISTOR 文件：790.16 Kbytes Page：13 Pages | CEL California Eastern Laboratories | | |
NESG2031M05产品属性
- 类型
描述
- 型号
NESG2031M05
- 功能描述
射频硅锗晶体管 NPN SiGe High Freq
- RoHS
否
- 制造商
Infineon Technologies 发射极 - 基极电压
- 封装
Reel
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS-瑞萨 |
24+25+/26+27+ |
SOT-343 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
NEC |
16+ |
SOT-343 |
10000 |
进口原装现货/价格优势! |
|||
NEC |
13+ |
SOT343 |
143000 |
特价热销现货库存 |
|||
NEC |
2023+ |
SOT343 |
5800 |
进口原装,现货热卖 |
|||
NEC |
22+ |
SOT343 |
3000 |
原装正品,支持实单 |
|||
NEC |
2023+ |
SOT343 |
3550 |
全新原厂原装产品、公司现货销售 |
|||
NEC |
08+ |
SOT-343 |
1393 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CEL |
23+ |
原厂原包 |
19960 |
只做进口原装 终端工厂免费送样 |
|||
NEC |
23+ |
SOT343 |
9960 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
|||
NEC |
17+ |
SOT343 |
9700 |
绝对原装正品现货假一罚十 |
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NESG2031M05规格书下载地址
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DdatasheetPDF页码索引
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