位置：首页 > IC中文资料第974页 > NE4210S01-T1B
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
NE4210S01-T1B | XtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 |  |   |
NE4210S01-T1B | SUPERLOWNOISEHJFET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown | CEL California Eastern Laboratories |  | |
NE4210S01-T1B | HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 |  | |
NE4210S01-T1B | 封装/外壳：4-SMD 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：HJ-FET 13DB S01 分立半导体产品 晶体管 - FET，MOSFET - 射频 | CEL California Eastern Laboratories | | |
XtoKuBANDSUPERLOWNOISEAMPLIFIERN-CHANNELHJ-FET DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGainNF=0.5dBT | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | | | |
SUPERLOWNOISEHJFET DESCRIPTION NECSNE4210S01isapseudomorphicHetero-JunctionFETthatusesthejunctionbetweenSi-dopedAIGaAsandundopedInGaAstocreateveryhighmobilityelectrons.ThedevicefeaturesmushroomshapedTiAlgatesfordecreasedgateresistanceandimprovedpowerhandling.Itsexcellentlown | CEL California Eastern Laboratories | | | |
HETEROJUNCTIONFIELDEFFECTTRANSISTOR DESCRIPTION TheNE4210S01isaHeteroJunctionFETthatutilizestheheterojunctiontocreatehighmobilityelectrons.ItsexcellentlownoiseandassociatedgainmakeitsuitableforDBSandanothercommercialsystems. FEATURES •SuperLowNoiseFigure&HighAssociatedGain NF=0.5dBTYP. | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | | |
NE4210S01-T1B产品属性
- 类型
描述
- 型号
NE4210S01-T1B
- 功能描述
射频GaAs晶体管 Super Lo Noise HJFET
- RoHS
否
- 制造商
TriQuint Semiconductor
- 技术类型
pHEMT
- 频率
500 MHz to 3 GHz
- 增益
10 dB
- 噪声系数
正向跨导
- gFS（最大值/最小值）
4 S 漏源电压
- 闸/源击穿电压
- 8 V
- 漏极连续电流
3 A
- 最大工作温度
+ 150 C
- 功率耗散
10 W
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEC |
SMT86 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
求购IC |
2016+ |
SMT86 |
5083 |
||||
NEC |
23+ |
SMT86 |
734 |
原装现货假一赔十 |
|||
RENESAS |
21+ |
VQFN |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
RENEASA |
21+ |
SMT-86 |
2000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
NEC |
2016+ |
SMT86 |
9000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
NEC |
20+ |
SMT-86 |
43000 |
原装优势主营型号-可开原型号增税票 |
|||
NEC |
23+ |
DO-4 |
18689 |
||||
RENESAS/瑞萨 |
22+ |
SMT86 |
127 |
只做原装进口 免费送样!! |
|||
NEC |
SMT-86 |
265209 |
假一罚十原包原标签常备现货! |
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NE4210S01-T1B规格书下载地址
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DdatasheetPDF页码索引
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