位置：首页 > IC中文资料 > MT25QL02GCBA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
封装/外壳：24-TBGA 包装：卷带（TR） 描述：IC FLSH 2GBIT SPI 133MHZ 24TPBGA 集成电路（IC） 存储器 | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb,3VMultipleI/OSerialFlashMemory3V,MultipleI/O,4KB,32KB,64KBSectorErase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Micron/镁光 |
21+ |
T-PBGA-24 |
6000 |
原装现货 |
|||
Micron |
23+ |
24TPBGA (6x8) |
9000 |
原装正品，支持实单 |
|||
Micron |
21+ |
24TPBGA (6x8) |
13880 |
公司只售原装,支持实单 |
|||
Micron |
1844+ |
BGA |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
MICRON |
23+ |
BGA |
18000 |
全新原装现货,假一赔十 |
|||
Micron |
21+ |
24TPBGA (6x8) |
610880 |
本公司只售原装 支持实单 |
|||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Micron Technology Inc. |
21+ |
54-TFBGA |
5280 |
进口原装!长期供应!绝对优势价格(诚信经营 |
|||
Micron |
17+ |
6200 |
|||||
MICRON/美光 |
22+ |
NA |
8000 |
中赛美只做原装 只有原装 |
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- MT263-G
- MT26310
- MT26300
- MT263
- MT26010
- MT25QL02GCBA1EW7-0SATES
- MT25QL02GCBA1EW7-0AITES
- MT25QL02GCBA1ESF-0SITES
- MT25QL02GCBA1ESF-0SATES
- MT25QL02GCBA1ESF-0AITES
- MT25QL02GCBA1ESE-0SITES
- MT25QL02GCBA1ESE-0SATES
- MT25QL02GCBA1ESE-0AITES
- MT25QL02GCBA1ESC-0SITES
- MT25QL02GCBA1ESC-0SATES
- MT25QL02GCBA1ESC-0AITES
- MT25QL02GCBA1E5X-0SITES
- MT25QL02GCBA1E5X-0SATES
- MT25QL02GCBA1E5X-0AITES
- MT25QL02GCBA1E14-0SITES
- MT25QL02GCBA1E14-0SATES
- MT25QL02GCBA1E14-0AITES
- MT25QL02GCBA1E12-0SITES
- MT25QL02GCBA1E12-0SATES
- MT25QL02GCBA1E12-0AITES
- MT25QL02GABA1EW9-0SITES
- MT25QL02GABA1EW9-0SATES
- MT25QL02GABA1EW9-0AITES
- MT25QL02GABA1EW7-0SITES
- MT25QL02GABA1EW7-0SATES
- MT25QL02GABA1EW7-0AITES
- MT25QL02GABA1ESF-0SITES
- MT25QL02GABA1ESF-0SATES
- MT25QL02GABA1ESF-0AITES
- MT25QL02GABA1ESF-0AATES
- MT25QL02GABA1ESE-0SITES
- MT25QL02GABA1ESE-0SATES
- MT25QL02GABA1ESE-0AITES
- MT25QL02GABA1ESC-0SITES
- MT25QL02GABA1ESC-0SATES
- MT25QL02GABA1ESC-0AITES
- MT25QL02GABA1E5X-0SITES
- MT25QL02GABA1E5X-0SATES
- MT25QL02GABA1E5X-0AITES
- MT25QL02GABA1E14-0SITES
- MT25310
- MT25300
- MT2518W
- MT2516W
- MT2516A
- MT2516
- MT2514W
- MT2514A
- MT2514
- MT2512W
- MT2512A
- MT2512
- MT2510W
- MT2510A
- MT2510
- MT2508W
- MT2508A
- MT2508
- MT2506W
- MT2506A
MT25QL02GCBA数据表相关新闻
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深圳市瑞智芯科技有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 详细描述： 型号：MSZ3ZTG47 品牌：纵行科技 品类：ZETag测试模块 系列：MSZ3ZTG 最小包装量1 工作频率433MHz，470MHz，868MHz，915MHz 待机电流
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深圳市瑞智芯科有限公司 联系人：彭先生 QQ：2851196982 直线：0755-82991809 手机：13787628849 邮箱：pc@szruizhixin.com 15.0*13.5mm封装，极小尺寸，支持UART串口AT指令，具备单向通信能力，极低功耗厂牌纵行科技 品类ZETag模组 系列MSZ1ZTG 最小包装量1，000 封装 安规/环境规范 应用等级工业级/I
2021-8-19MT25QL128ABA1ESE0SIT
128MbitSOIC-8SPINOR闪存,SOIC-8NOR闪存,S29GL512N/256N/128NNOR闪存,USON-8QPI,SPINOR闪存,-55CNOR闪存,1.95V1.65VNOR闪存
2020-7-8
DdatasheetPDF页码索引
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