MT25QL价格
参考价格：￥61.8921
型号：MT25QL01GBBA8E12-0SIT 品牌：MICRON 备注：这里有MT25QL多少钱，2024年最近7天走势，今日出价，今日竞价，MT25QL批发/采购报价，MT25QL行情走势销售排行榜，MT25QL报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 |  |   | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | | |
2Gb, 3V Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB, 32KB, 64KB Sector Erase Features •Stackeddevice(four512Mbdie) •SPI-compatibleserialbusinterface •Singleanddoubletransferrate(STR/DTR) •Clockfrequency –133MHz(MAX)forallprotocolsinSTR –90MHz(MAX)forallprotocolsinDTR •Dual/quadI/Ocommandsforincreasedthroughput upto90MB/s • | MicronMicron Technology Inc. 镁光美国镁光科技有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MICRON |
1716+ |
? |
7500 |
只做原装进口,假一罚十 |
|||
Micron |
20+ |
24TPBGA (6x8) |
9000 |
||||
Micron Technology Inc. |
24+ |
24-TBGA |
9350 |
独立分销商,公司只做原装，诚心经营,免费试样正品保证 |
|||
micron(镁光) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
MICRON/美光 |
22+ |
BGA |
9000 |
原装正品 |
|||
Micron |
21+ |
24TPBGA (6x8) |
13880 |
公司只售原装,支持实单 |
|||
MICRON |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
|||
Micron Technology Inc. |
21+ |
24-T-PBGA(6x8) |
56200 |
一级代理/放心采购 |
|||
Micron |
22+ |
24TPBGA (6x8) |
9000 |
原厂渠道,现货配单 |
|||
Micron |
23+ |
24TPBGA (6x8) |
9000 |
原装正品，支持实单 |
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2020-7-8
DdatasheetPDF页码索引
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