型号 功能描述 生产厂家&企业 LOGO 操作
M48Z128

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M48Z128

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
M48Z128

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

1Mbit128Kbx8ZEROPOWERSRAM

Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 1MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

5.0Vor3.3V,1Mbit(128Kbitx8)ZEROPOWER짰SRAM

文件:339.54 Kbytes Page:20 Pages

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

封装/外壳:32-DIP 模块(0.600",15.24mm) 包装:管件 描述:IC NVSRAM 1MBIT PARALLEL 32PMDIP 集成电路(IC) 存储器

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS

M48Z128产品属性

  • 类型

    描述

  • 型号

    M48Z128

  • 制造商

    STMICROELECTRONICS

  • 制造商全称

    STMicroelectronics

  • 功能描述

    1 Mbit 128Kb x8 ZEROPOWER SRAM

更新时间:2024-4-23 17:43:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
ST
2020+
DIP
35000
100%进口原装正品公司现货库存
ST
2016+
DIP
6528
只做原厂原装现货!终端客户个别型号可以免费送样品!
STMicroelectronics
23+
32-DIP
7750
全新原装优势
ST/意法
22+
N
30000
十七年VIP会员,诚信经营,一手货源,原装正品可零售!
ST
22+
DIP-32
30000
原装正品
ST
2024+
DIP-32
32560
原装优势绝对有货
ST
20+
DIP-32
25000
全新原装现货,假一赔十
ST/意法
22+
N
12800
本公司只做进口原装!优势低价出售!
ST
2017+
DIP32
25689
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票

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