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M48Z12价格
参考价格：￥36.6008
型号：M48Z12-150PC1 品牌：STMicroelectronics 备注：这里有M48Z12多少钱，2024年最近7天走势，今日出价，今日竞价，M48Z12批发/采购报价，M48Z12行情走势销售排行榜，M48Z12报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M48Z12 | 16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M48Z12 | 5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M48Z12 | 5V,16Kbit(2Kbx8)ZEROPOWERSRAM 文件：178.57 Kbytes Page：20 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M48Z12 | 5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM 文件：335.4 Kbytes Page：21 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
16Kbit2Kbx8ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM Description TheM48Z02/12ZEROPOWER®RAMisa2Kx8non-volatilestaticRAMwhichispinandfunctioncompatiblewiththeDS1220. Aspecial24-pin,600milDIPCAPHAT™packagehousestheM48Z02/12siliconwithalong-lifelithiumbuttoncelltoformahighlyintegratedbattery-backedmemoryso | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5.0VOR3.3V,1Mbit(128Kbitx8)ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
1Mbit128Kbx8ZEROPOWERSRAM Description TheM48Z128/Y/VZEROPOWER®RAMisa128Kbitx8non-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic,32-pinDIPmoduletoprovideahighlyintegratedbatterybackedmemorysolution | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
3.3V/5V1Mbit128Kbx8ZEROPOWERSRAM SUMMARYDESCRIPTION TheM48Z129Y/VZEROPOWER®SRAMisa1,048,576bitnon-volatilestaticRAMorganizedas131,072wordsby8bits.Thedevicecombinesaninternallithiumbattery,aCMOSSRAMandacontrolcircuitinaplastic32-pinDIPModule.The M48Z129Y/Vdirectlyreplacesindustrystandar | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM 文件：343.95 Kbytes Page：22 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM 文件：335.4 Kbytes Page：21 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM 文件：178.57 Kbytes Page：20 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWERSRAM 文件：178.57 Kbytes Page：20 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
5V,16Kbit(2Kbx8)ZEROPOWER짰SRAM 文件：335.4 Kbytes Page：21 Pages | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
封装/外壳：24-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 16KBIT PAR 24PCDIP 集成电路（IC） 存储器 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
封装/外壳：24-DIP 模块（0.600"，15.24mm） 包装：托盘 描述：IC NVSRAM 16KBIT PAR 24PCDIP 集成电路（IC） 存储器 | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M48Z12产品属性
- 类型
描述
- 型号
M48Z12
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
5 V, 16 Kbit(2 Kb x 8) ZEROPOWER? SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
22+ |
DIP |
10000 |
原装正品优势现货供应 |
|||
原厂原包 |
2022+ |
原装 |
38560 |
原装进口现货,工厂客户可以放款。17377264928微信同 |
|||
ST |
22+ |
DIP-32 |
2897 |
只做原装自家现货供应! |
|||
ST/意法半导体 |
2023 |
PCDIP-24 |
6000 |
公司原装现货/支持实单 |
|||
23+ |
N/A |
49400 |
正品授权货源可靠 |
||||
ST |
20+ |
DIP |
2860 |
原厂原装正品价格优惠公司现货欢迎查询 |
|||
STMicroelectronics |
2021+ |
硅原现货 |
505000 |
专供存储器芯片,医疗信誉单位! |
|||
ST |
24+ |
DIP24 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
|||
ST/意法半导体 |
2023+ |
PCDIP-24 |
6000 |
全新原装深圳仓库现货有单必成 |
M48Z12芯片相关品牌
M48Z12规格书下载地址
M48Z12参数引脚图相关
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- M49142/04-0004
- M49142/03-0017
- M49142/03-0009
- M49142/03-0008
- M49142/03-0007
- M49142/03-0005
- M4912
- M490B
- M49_15
- M48Z58Y-70PC1
- M48Z58Y-70MH1F
- M48Z58Y
- M48Z58-70PC1
- M48Z58
- M48Z512BV-85PM1
- M48Z512AV-85PM1
- M48Z35Y-70PC1
- M48Z35Y-70MH1F
- M48Z35Y
- M48Z35-70PC1
- M48Z35
- M48Z32V-35MT1F
- M48Z32V-35MT1E
- M48Z32V
- M48Z30Y
- M48Z30
- M48Z2M1
- M48Z18-100PC1
- M48Z18
- M48Z128
- M48Z12-70PC1
- M48Z12-150PC1
- M48Z09
- M48Z08-100PC1
- M48Z08
- M48Z02-70PC1
- M48Z02-150PC1
- M48Z02
- M48TPC1
- M48TMH1
- M48T86
- M48T59Y
- M48T59V
- M48T59
- M48T58Y-70PC1
- M48T58Y-70MH1F-CUTTAPE
- M48T58Y-70MH1F
- M48T58Y
- M48T58-70PC1
- M48T58
- M48T559
- M48T39Y
- M48T37Y-70MH1F
- M48T37Y
- M48T37V-10MH1F-CUTTAPE
- M48T37V-10MH1F
- M48T37V
- M48T36
- M48T35Y-70PC1
- M48T35Y-70MH1F
- M48T35Y
- M48T35AV-10PC1
- M48T35AV-10MH1F-CUTTAPE
- M48T35AV-10MH1F
- M48T35-70PC1
- M48T35
- M48T201Y-70MH1F
- M48T201V-85MH1F/BKN
- M48T201V-85MH1F
- M48T18-150PC1
- M48T18
- M48T129
M48Z12数据表相关新闻
M48T35Y-70PC1
M48T35Y-70PC1
2021-11-19M48Z32V-35MT1F
M48Z32V-35MT1F
2021-6-28M48Z58Y-70PC1进口原管原盒现货
焕盛达竭诚为您提供一站式配套服务。当天下单，当天发货；
2020-9-16M48T86PC1
+125C实时时钟,Serial实时时钟,Serial,3-Wire实时时钟,SOIC-8+125C实时时钟,SOIC-8实时时钟,BackupSwitching实时时钟
2020-9-10M48T35AV-10MH6F
I2CNVRAM，128kx8SPINVRAM，8MbitNVRAM，并行40CNVRAM，400uANVRAM，4MbitNVRAM
2020-7-16M4A5-128/64-10VNClattice专业20年，大量现货
德信电子（香港）有限公司 客服经理：林先生 联系电话：0755-33359577
2019-7-18
DdatasheetPDF页码索引
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