位置：首页 > IC中文资料第11726页 > M14C16
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
M14C16 | MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 |  |   |
M14C16 | MemoryMicromodulesGeneralInformationforD1,D2andCPackaging DESCRIPTION MemoryCardsconsistoftwomainparts:theplasticcard,andtheembeddedMicromodule(which,inturn,carriesthesiliconchip). ■Micromodulesweredevelopedspecificallyfor embeddinginSmartcardsandMemoryCards ■TheMicromoduleprovides: –Supportforthechi | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M14C16DieDescription Padlocationsaremeasuredrelativetothediecentre(whereXandYarerespectivelythehorizontalandverticalaxis,measuredinµm). PRODUCTM14C16 ■WAFERSIZE152mm(6inches) ■DIEIDENTIFICATIONM14C16KA_R ■DIESIZE(XxY)1390x2375µm ■SCRIBELINE101.8x102.4µm ■PADOPENIN | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | | |
MemoryCardIC16/4KbitSerialI짼CBusEEPROM DESCRIPTION Eachdeviceisanelectricallyerasableprogrammablememory(EEPROM)fabricatedwithSTMicroelectronics’sHighEndurance,SinglePolysilicon,CMOStechnology.ThisguaranteesanendurancetypicallywellaboveonemillionErase/Writecycles,withadataretentionof40years.Them | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | | |
M14C16产品属性
- 类型
描述
- 型号
M14C16
- 制造商
STMICROELECTRONICS
- 制造商全称
STMicroelectronics
- 功能描述
Memory Micromodules General Information for D1, D2 and C Packaging
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ESMT |
23+ |
NA/ |
7800 |
原装现货,当天可交货,原型号开票 |
|||
ESMT/Jinghao Technology Co. , |
21+ |
BGA |
4550 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
ESMT |
BGA |
28533 |
原盒原标,正品现货 诚信经营 价格美丽 假一罚十! |
||||
ESMT |
23+ |
BGA |
30000 |
代理原装现货,价格优势 |
|||
ESMT |
21+ |
BGA-84 |
880000 |
明嘉莱只做原装正品现货 |
|||
ESMT |
BGA |
265209 |
假一罚十原包原标签常备现货! |
||||
ESMT |
BGA |
893993 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
ESMT |
12+ |
BGA |
4550 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
TOS |
PICC20 |
8 |
自己现货 |
||||
ESMT |
2122+ |
BGA-84 |
23800 |
全新原装正品现货,优势渠道可含税,假一赔十 |
M14C16芯片相关品牌
M14C16规格书下载地址
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