K26价格

参考价格:¥196.4920

型号:K2636 品牌:Velleman 备注:这里有K26多少钱,2024年最近7天走势,今日出价,今日竞价,K26批发/采购报价,K26行情走势销售排行榜,K26报价。
型号 功能描述 生产厂家&企业 LOGO 操作
K26

SCHOTTKY RECTIFIERS

文件:1.22815 Mbytes Page:3 Pages

NIUHANG

Dongguan City Niuhang Electronics Co.LTD

NIUHANG
K26

SCHOTTKY BARRIE R RECTIFIERS

文件:1.41977 Mbytes Page:2 Pages

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANGSAMYANG ELECTRONICS CO.,LTD.

SAMYANG
K26

包装:盒 描述:HEATER HEATER ELEMENT

SIEMENS

Siemens Ltd

SIEMENS
K26

包装:盒 描述:HEATER HEATER ELEMENT

SIEMENS

Siemens Ltd

SIEMENS

Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

Features Excellentcapabilityofabsorbingtransientsurge Quickresponsetosurgevoltage(nsLevel) Glasspassivatedjunctions Highvoltagelcmpignitors

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSIII)

SwitchingRegulatorApplications,DC-DCConverterandMotorDriveApplications •Lowdrain-sourceON-resistance:RDS(ON)=1.4Ω(typ.) •Highforwardtransferadmittance:⎪Yfs⎪=6.0S(typ.) •Lowleakagecurrent:IDSS=100μA(max)(VDS=800V) •Enhancement-model:Vth=2.0to4.0V(VD

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Ultrahigh-Speed Switching Applications

Ultrahigh-SpeedSwitchingApplications Features •LowON-resistance. •LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

擁낂쳵?잆궧?ㅳ긿?곥꺍?곁뵪

Ultrahigh-SpeedSwitchingApplications Features ·LowON-resistance. ·LowQg.

SANYOSanyo

三洋三洋电机株式会社

SANYO

N-channel MOS-FET

450V0,65Ω10A50W >Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -Gene

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNEL SILICON POWER MOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage VGS=±35VGuarantee Avalanche-proof Applications Switchingregulators UPS DC-DCconverters Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-CHANNEL SILICON POWER MOS-FET

Features Highspeedswitching Lowon-resistance Nosecondarybreakdown Lowdrivingpower Highvoltage VGS=±35VGuarantee Avalanche-proof Applications Switchingregulators UPS DC-DCconverters Generalpurposepoweramplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channel MOS-FET

>Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated >Applications -SwitchingRegulators -UPS -DC-DCconverters -GeneralPurposePowerAmplifier

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channel MOS-FET

Features -HighSpeedSwitching -LowOn-Resistance -NoSecondaryBreakdown -LowDrivingPower -HighVoltage -VGS=±30VGuarantee -RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channel MOS-FET

Features 1.HighSpeedSwitching 2.LowOn-Resistance 3.NoSecondaryBreakdown 4.LowDrivingPower 5.HighVoltage 6.VGS=±30VGuarantee 7.RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N-channel MOS-FET

Features 1.HighSpeedSwitching 2.LowOn-Resistance 3.NoSecondaryBreakdown 4.LowDrivingPower 5.HighVoltage 6.VGS=±30VGuarantee 7.RepetitiveAvalancheRated

FujiFUJI CORPORATION

株式会社FUJI

Fuji

N CHANNEL MOS TYPE (HIGH SPEED, HIHG VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

DC−DCConverter,RelayDriveandMotorDriveApplications 1.Lowdrain−sourceONresistance:RDS(ON)=1.35Ω(typ.) 2.Highforwardtransferadmittance:|Yfs|=4.0S(typ.) 3.Lowleakagecurrent:IDSS=100μA(max)(VDS=500V) 4.Enhancementmode:Vth=2.0to4.0V(VD

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

HVX-2 Series Power MOSFET(900V 3A)

HVX-2SeriesPowerMOSFET(900V3A) FEATURES Inputcapacitance(Ciss)issmall. Especially,inputcapacianceat0biassissmall ThestaticRds(on)issmall Theswitchingtimeisfast. Avalancheresistanceguaraneed. 

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元(上海)电器有限公司

SHINDENGEN

HVX-2 Series Power MOSFET(900V 5A)

N-ChannelEnhancementtype FEATURES ●Inputcapacitance(Ciss)issmall. Especially,inputcapacitanceat0biassissmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC240

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元(上海)电器有限公司

SHINDENGEN

HVX-2 Series Power MOSFET(900V 10A)

FEATURES ●Inputcapacitance(Ciss)issmall.Especially,inputcapacitanceat0biassissmall. ●ThestaticRds(on)issmall. ●Theswitchingtimeisfast. ●Avalancheresistanceguaranteed. APPLICATION ●SwitchingpowersupplyofAC240Vinput ●Highvoltagepowersupply ●In

SHINDENGENSHINDENGEN ELECTRIC MANUFACTURING CO.LTD

新电元(上海)电器有限公司

SHINDENGEN

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

ChopperRegulator,DC−DCConverterandMotorDrive Applications ●Lowdrain−sourceONresistance:RDS(ON)=0.5Ω(typ.) ●Highforwardtransferadmittance:|Yfs|=11S(typ.) ●Lowleakagecurrent:IDSS=100μA(max)(VDS=600V) ●Enhancementmode:Vth=2.0to4.0V(VDS=10V,ID

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

HIGH VOLTAGE BIDIRECTIONAL TRIGGER DIODE

文件:2.41768 Mbytes Page:3 Pages

NIUHANG

Dongguan City Niuhang Electronics Co.LTD

NIUHANG

Sidac

文件:896.72 Kbytes Page:3 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

文件:944.28 Kbytes Page:4 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

文件:902.6 Kbytes Page:4 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

文件:1.04861 Mbytes Page:4 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

Sidac

文件:927.06 Kbytes Page:4 Pages

UNSEMIUN Semiconducctor INC

优恩半导体深圳市优恩半导体有限公司

UNSEMI

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS)

文件:288.27 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Switching Regulator Applications

文件:416.22 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

文件:290.17 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Switching Regulator Applications

文件:416.22 Kbytes Page:6 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS)

文件:291.2 Kbytes Page:5 Pages

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TOSHIBA

Silicon N-Channel MOSFET

文件:632.59 Kbytes Page:7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Silicon N-Channel MOSFET

文件:1.00895 Mbytes Page:7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Silicon N-Channel MOSFET

文件:288.57 Kbytes Page:8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Silicon N-Channel MOSFET

文件:288.57 Kbytes Page:8 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Silicon N-Channel MOSFET

文件:581.25 Kbytes Page:7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Silicon N-Channel MOSFET

文件:703.95 Kbytes Page:7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Multilayer Chip Capacitors

文件:323.06 Kbytes Page:17 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Multilayer Chip Capacitors

文件:323.06 Kbytes Page:17 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Multilayer Chip Capacitors

文件:323.06 Kbytes Page:17 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

isc N-Channel MOSFET Transistor

文件:323.37 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Silicon N-Channel MOSFET

文件:977.72 Kbytes Page:7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Silicon N-Channel MOSFET

文件:1.09966 Mbytes Page:7 Pages

WinsemiShenzhen Wenxian Microelectronics Co., Ltd

稳先微电子深圳市稳先微电子有限公司

Winsemi

Kinetis K26 Sub-Family

文件:1.11535 Mbytes Page:92 Pages

nxpNXP Semiconductors

恩智浦恩智浦半导体公司

nxp

Power supply

文件:1.28644 Mbytes Page:4 Pages

PFBeijiafu (Beijing) Process Automation Control Equipment Co., Ltd

倍加福(北京)过程自动化倍加福(北京)过程自动化控制设备有限公司

PF

K26产品属性

  • 类型

    描述

  • 型号

    K26

  • 制造商

    Velleman Inc

  • 功能描述

    OPEN PC BOARD KITSTROBE LIGHT

更新时间:2024-3-28 21:46:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
09
22+
TO-220F
3000
原装现货假一赔十
东芝
20+
TO-220
36800
原装优势主营型号-可开原型号增税票
TOSHIBA 光耦 集成电路
Original 元件
原厂原封
10050
TOSHIBA现货原装△-更多数量咨询样品批量支持;详询
NA
2020+
DIP
19
百分百原装正品 真实公司现货库存 本公司只做原装 可
FUI
23+
TO-3P
18000
TOSHIBA/东芝
23+
TO-220
50000
只做原装正品
N/A
2023+
QFN
8800
正品渠道现货 终端可提供BOM表配单。
TOSHIBA
23+
TO220
65480
SHINDENGEN/新电元
23+
TO-3P
89630
当天发货全新原装现货
FUJISTU
2016+
TO-220
2500
只做原装,假一罚十,公司可开17%增值税发票!

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