iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=31mΩ(typ.) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

iscN-ChannelMOSFETTransistor

•DESCRITION •SwitchingVoltageRegulators •FEATURES •Lowdrain-sourceon-resistance: RDS(ON)=31mΩ(typ.) •Enhancementmode: Vth=2.0to4.0V(VDS=10V,ID=1mA) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAFieldEffectTransistorSiliconNChannelMOSType(U-MOSIV)

SwichingRegulatorApplications •Lowdrain-sourceONresistance:RDS(ON)=31mΩ(typ.) •Highforwardtransferadmittance:|Yfs|=50S(typ.) •Lowleakagecurrent:IDSS=10μA(max)(VDS=100V) •Enhancement-model:Vth=2.0to4.0V(VDS=10V,ID=1mA)