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IRLZ34价格
参考价格：￥14.9168
型号：IRLZ34 品牌：Vishay 备注：这里有IRLZ34多少钱，2024年最近7天走势，今日出价，今日竞价，IRLZ34批发/采购报价，IRLZ34行情走势销售排行榜，IRLZ34报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLZ34 | N-channel enhancement mode Logic level TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepower | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 |  |   |
IRLZ34 | Power MOSFET FEATURES •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 |  | |
IRLZ34 | Power MOSFET FEATURES •DynamicdV/dtRating •Logic-LevelGateDrive •RDS(on)SpecifiedatVGS=4Vand5V •175°COperatingTemperature •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromV | VishayVishay Siliconix 威世科技 | | |
IRLZ34 | HEXFET POWER MOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRLZ34 | Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •Logic-LevelGateDrive •RDS(on)SpecifiedatVGS=4Van | VishayVishay Siliconix 威世科技 | | |
IRLZ34 | Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRLZ34 | Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRLZ34 | Power MOSFET 文件：1.61395 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRLZ34 | HEXFET Power Mosfet 文件：294.48 Kbytes Page：4 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | |
Power MOSFET FEATURES •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 | VishayVishay Siliconix 威世科技 | | | |
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichtingspeedandruggedizeddevicedesignthatPowerMOSFETsareknownfor,providesthedesignerwitha | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichtingspeedandruggedizeddevicedesignthatPowerMOSFETsareknownfor,providesthedesignerwitha | VishayVishay Siliconix 威世科技 | | | |
N-channel enhancement mode Logic level TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepower | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | | | |
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel MOSFET Transistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤35mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A ) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035廓 , ID = 30A ) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •Logic-LevelGateDrive •RDS(on)SpecifiedatVGS=4Van | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •DynamicdV/dtRating •Logic-LevelGateDrive •RDS(on)SpecifiedatVGS=4Vand5V •175°COperatingTemperature •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC DESCRIPTION ThirdgenerationPowerMOSFETsfromV | VishayVishay Siliconix 威世科技 | | | |
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswichtingspeedandruggedizeddevicedesignthatPowerMOSFETsareknownfor,providesthedesignerwitha | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •Advancedprocesstechnology •Surface-mount •175°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare Ro | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET FEATURES •Advancedprocesstechnology •Surface-mount •175°Coperatingtemperature •Fastswitching •Fullyavalancherated •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare Ro | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：1.61395 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
isc N-Channel MOSFET Transistor 文件：280.86 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
N-Channel MOSFET Transistor 文件：338.61 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Advanced Process Technology 文件：231.27 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET 文件：230.71 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Advanced Process Technology 文件：231.27 Kbytes Page：9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET Power MOSFET 文件：311.7 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰 Power MOSFET 文件：191.02 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Logic-Level Gate Drive 文件：191.03 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFET짰 Power MOSFET 文件：191.02 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Logic-Level Gate Drive 文件：191.03 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fast Switching 文件：298.94 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fast Switching 文件：298.94 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Power MOSFET 文件：1.53667 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Power MOSFET 文件：461.62 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRLZ34产品属性
- 类型
描述
- 型号
IRLZ34
- 功能描述
MOSFET N-Chan 60V 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/INFINEON |
21+ |
TO-220 |
60000 |
原装正品进口现货 |
|||
IR |
23+ |
TO-220 |
22000 |
原装现货假一罚十 |
|||
2015+ |
5000 |
公司现货库存 |
|||||
INFINEON/英飞凌 |
22+ |
TO-220 |
9830 |
专营INFINEON/英飞凌全新原装进口正品 |
|||
IR/INFINEON |
24+ |
TO-220 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
IR |
22+ |
TO-220 |
4500 |
全新原装品牌专营 |
|||
IR |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
|||
Vishay Siliconix |
22+ |
TO2203 |
9000 |
原厂渠道,现货配单 |
|||
IR |
03+ |
TO-220 |
40 |
||||
INTERNATIONA |
05+ |
原厂原装 |
4345 |
只做全新原装真实现货供应 |
IRLZ34芯片相关品牌
IRLZ34规格书下载地址
IRLZ34参数引脚图相关
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- isd1420
- IRM1600
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- IRM-05
- IRM048U
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- IRLU3915PBF
- IRLU120
- IRLU110
- IRLU024
- IRLU014
- IRLS530
- IRLR120
- IRLR110
- IRLR024
- IRLR014
- IRLM210
- IRLL110
- IRLL014
- IRLI640
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2020-7-16
DdatasheetPDF页码索引
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