IRLZ14价格

参考价格:¥1.6489

型号:IRLZ14PBF 品牌:Vishay 备注:这里有IRLZ14多少钱,2024年最近7天走势,今日出价,今日竞价,IRLZ14批发/采购报价,IRLZ14行情走势销售排行榜,IRLZ14报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRLZ14

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRLZ14

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay
IRLZ14

Power MOSFET

FEATURES •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay
IRLZ14

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRLZ14

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRLZ14

Power MOSFET

文件:1.16541 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •175°Coperatingtemperature •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay

HEXFET Power MOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpower

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •Advancedprocesstechnology •Surface-mount •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpar

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •Advancedprocesstechnology •Surface-mount •175°Coperatingtemperature •Fastswitching •Materialcategorization:fordefinitionsof compliancepleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoHS-compliantand/orpar

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET(Vdss=60V, Rds(on)=0.20ohm, Id=10A)

Description ThirdGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayutilizeadvancedprocessingtechniquestoachieveextermelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatPowerMOSFETsarewellknownfor,providesthedesignerwit

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

isc N-Channel MOSFET Transistor

文件:280.48 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:1.08982 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:1.16541 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:396.23 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:396.23 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:317.61 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:396.23 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

IRLZ14产品属性

  • 类型

    描述

  • 型号

    IRLZ14

  • 功能描述

    MOSFET N-Chan 60V 10 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-16 15:49:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
22+
TO-220
4500
全新原装品牌专营
IR
23+
65480
IR
23+
589610
新到现货 原厂一手货源 价格秒杀代理!
IR
2023+
TO-220
5800
进口原装,现货热卖
Vishay Siliconix
22+
TO2203
9000
原厂渠道,现货配单
IR/VISHAY
23+
TO-263
12300
全新原装真实库存含13点增值税票!
IR
TO-220
265209
假一罚十原包原标签常备现货!
IR
23+
TO-220
35890
原厂
2020+
TO-220
20000
公司代理品牌,原装现货超低价清仓!
VISHAY(威世)
23+
TO-263
8357
支持大陆交货,美金交易。原装现货库存。

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