AdvancedPowerMOSFET

BVDSS=200V RDS(on)=1.5Ω ID=3.3A FEATURES ♦AvalancheRuggedTechnology ♦RuggedGateOxideTechnology ♦LowerInputCapacitance ♦ImprovedGateCharge ♦ExtendedSafeOperatingArea ♦150°COperatingTemperature ♦LowerLeakageCurrent:10µA(Max.)@VDS=200V ♦LowerRDS(ON):

iscN-ChannelMOSFETTransistor

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Compact,PortableIP67MilitaryFastEthernetSwitch

PRODUCTDESCRIPTION EthernetisbecomingthestandardforIP-based componentsinawiderangeofmilitaryandcommercial land,sea,andairapplications.Whenbuilding communicationswheredataprioritizationisnota concernandtheamountoftrafficislow,unmanaged, FastEthernetswitche

PulseEncapsulatedP.C.BoardMount

Features Theseferritecoredtransformersarefullyencapsulatedinahighgradeblackmoldedcase withaUL94V-Orating. Unitsareintendedforwidebandandpulseapplicationsincludingthyristor/triacfiring circuits. Peakpulsevoltageratingmaximumof250V. Insulationtestedto1,000

횠6.35mmmountingBlackanodisedaluminiumhousing

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LowProfile

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AluminumCapacitors125°C,Non-Polar,Miniature

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