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IRLR024价格
参考价格：￥11.6424
型号：IRLR024 品牌：Vishay 备注：这里有IRLR024多少钱，2024年最近7天走势，今日出价，今日竞价，IRLR024批发/采购报价，IRLR024行情走势销售排行榜，IRLR024报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRLR024 | 5-BITPROGRAMMABLESYNCHRONOUSBUCK,NON-SYNCHRONOUS,ADJUSTABLELDOAND200mAON-BOARDLDO DESCRIPTION TheIRU3007controllerICisspecificallydesignedtomeetIntelspecificationforPentiumIIämicroprocessorapplicationsaswellasthenextgenerationofP6familyprocessors.TheIRU3007providesasinglechipcontrollerICfortheVcore,LDOcontrollerforGTL+andaninternal20 | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRLR024 | PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 |  | |
IRLR024 | PowerMOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRLR024,SiHLR024) •Straightlead(IRLU024,SiHLU024) •Availableintapeandreel •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.v | VishayVishay Siliconix 威世科技 | | |
IRLR024 | PowerMOSFET 文件：463.68 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | |
IRLR024 | PowerMOSFET 文件：1.2042 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
IRLR024 | PowerMOSFET 文件：1.2042 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Surface-mount(IRLR024,SiHLR024) •Straightlead(IRLU024,SiHLU024) •Availableintapeandreel •Logic-levelgatedrive •RDS(on)specifiedatVGS=4Vand5V •Fastswitching •Materialcategorization:fordefinitionsofcompliance pleaseseewww.v | VishayVishay Siliconix 威世科技 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-ChannelMOSFETTransistor •DESCRITION •FastSwitching •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤65mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
Logic-LevelGateDrive Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
UltraLowOn-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthrough-holemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. ●Ultr | KERSEMI Kersemi Electronic Co., Ltd. |  | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Logic-LevelGateDrive Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleonresistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewel | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thes | VishayVishay Siliconix 威世科技 | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitchingspeedandimpr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：1.2042 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
iscN-ChannelMOSFETTransistor 文件：397.91 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Logic-LevelGateDrive 文件：313.98 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Logic-LevelGateDrive 文件：313.98 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel60V(D-S)MOSFET 文件：1.043609 Mbytes Page：8 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
AdvancedProcessTechnology 文件：313.98 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：1.2042 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
HEXFETPOWERMOSFET 文件：745.11 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：472.42 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：472.42 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.2042 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：463.68 Kbytes Page：11 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：472.42 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.2042 Mbytes Page：10 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：472.42 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：472.42 Kbytes Page：13 Pages | VishayVishay Siliconix 威世科技 | | | |
LowPower,5MBdDigitalCMOSOptocoupler Description ACPL-M21L(singlechannelSO-5package),ACPL-021L(singlechannelSO-8package)andACPL-024L(dualchannelSO-8package)areoptically-coupledlogicgates.ThedetectorIChasCMOSoutputstageandopticalreceiverinputstagewithbuilt-inSchmitttriggertoprovidelogic-compatibl | AVAGOAvago 安华高安华高科技 |  | | |
PCboardmountinganddirectinsertmountingavailable 文件：1.60394 Mbytes Page：3 Pages | HUAXINANHuaXinAn Electronics CO.,LTD 华兴安深圳市华兴安电子有限公司 |  | | |
LowPower,5-MBdDigitalCMOSOptocoupler 文件：721.15 Kbytes Page：16 Pages | BOARDCOMBroadcom Corporation. 博通公司博通半导体 |  | | |
LowPower,5-MBdDigitalCMOSOptocoupler 文件：721.15 Kbytes Page：16 Pages | BOARDCOMBroadcom Corporation. 博通公司博通半导体 | | | |
DCPOWERJACKSPCBOARDANDPANELMOUNT 文件：214.2 Kbytes Page：3 Pages | ADAM-TECHAdam Technologies, Inc. 亚当科技亚当科技股份有限公司 |  | |
IRLR024产品属性
- 类型
描述
- 型号
IRLR024
- 功能描述
MOSFET N-Chan 60V 14 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
TO-252 |
20540 |
保证进口原装现货假一赔十 |
|||
原厂品牌 |
2020+ |
SO-252 |
210000 |
100%进口原装正品公司现货库存 |
|||
INFINEON |
21+ |
TO-252 |
40000 |
只做原装 假一罚十 |
|||
IR |
2305+ |
原厂封装 |
12500 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
|||
IR |
22+ |
TO-252 |
9800 |
原装进口现货假一赔十 |
|||
IR |
1950+ |
TO252 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
Infineon |
22+ |
NA |
493 |
加我QQ或微信咨询更多详细信息, |
|||
Infineon/英飞凌 |
21+ |
DPAK |
6820 |
只做原装,质量保证 |
|||
IR |
23+ |
TO-252 |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
VISHAY |
2018+ |
SOT-252 |
12000 |
VISHAY专营进口原装现货假一赔十 |
IRLR024芯片相关品牌
IRLR024规格书下载地址
IRLR024参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRLZ44
- IRLZ40
- IRLZ34S
- IRLZ34N
- IRLZ34L
- IRLZ34
- IRLZ24S
- IRLZ24N
- IRLZ24L
- IRLZ24
- IRLZ14S
- IRLZ14L
- IRLZ14
- IRLU120
- IRLU110
- IRLU024
- IRLU014
- IRLS530
- IRLR2705PBF
- IRLR2703TRPBF-CUTTAPE
- IRLR2703TRPBF
- IRLR2703TRLPBF
- IRLR2703PBF
- IRLR2305
- IRLR120TRPBF
- IRLR120PBF
- IRLR120NTRPBF
- IRLR120NTRLPBF
- IRLR120NPBF
- IRLR120NHR
- IRLR120
- IRLR110TRPBF
- IRLR110PBF
- IRLR110
- IRLR024TRPBF
- IRLR024PBF
- IRLR024NTRPBF-CUTTAPE
- IRLR024NTRPBF
- IRLR024NTRLPBF
- IRLR024NPBF
- IRLR014TRPBF-CUTTAPE
- IRLR014TRPBF
- IRLR014TRLPBF
- IRLR014PBF
- IRLR014
- IRLP3034PBF
- IRLMS6802TRPBF
- IRLMS6802TR
- IRLMS6702TRPBF-CUTTAPE
- IRLMS6702TRPBF
- IRLMS5703TRPBF/BKN
- IRLMS5703TRPBF
- IRLMS5703TR
- IRLMS2002TRPBF-CUTTAPE
- IRLMS2002TRPBF
- IRLMS1902TRPBF
- IRLMS1902TR
- IRLMS1902PBF
- IRLMS1503TRPBF-CUTTAPE
- IRLMS1503TRPBF
- IRLM210
- IRLL110
- IRLL014
- IRLI640
- IRLI620
- IRLI520
- IRLF230
- IRLF120
- IRLD120
- IRLD110
- IRLD024
- IRLD014
- IRL830T
- IRL830S
- IRL81A
- IRL8114
- IRL8113
- IRL81
- IRL80A
IRLR024数据表相关新闻
IRLR2905TRPBF
进口代理
2023-11-1IRLML9303TRPBF
进口代理
2022-12-5IRLR2905TRPBF INFINEON/英飞凌 2021+ TO-252
https://hfx03.114ic.com/
2022-1-29IRLR2705TRPBF工厂包装数量:2000
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2021-9-17IRLML6402TRPBF全新原装IR正品现货
焕盛达-专注原装真芯服务；当天下单，当天发货；
2020-8-19IRLML6402TRPBFINFINEONMOSFETSOT-23原装大量现货
IRLML6402TRPBFINFINEONMOSFETSOT-23原装正品大量现货
2019-3-19
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