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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRGBC20 | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A) Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
IRGBC20FD2 Introduction Thereliabilityreportisasummaryofthetestdatacollatedsincetheimplementationofthereliabilityprogramme.Thisreportwillbeperiodicallyupdatedtypicallyonaquarterlybasis.Futurepublicationsofthisreportwillalsoincludeasappropriateadditionalinformationto | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.0A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.0A) ShortCircuitRatedUltraFastFastIGBT Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyp | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,applications. Thesenewshort | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) INSULATEDGATEBIPOLARTRANSISTORWITHULTRAFASTSOFTRECOVERYDIODE Features •ShortCircuitRatedUltraFast:Optimizedforhighoperatingfrequencies>5.0kHz,andShort CircuitRatedto10µs@125°C,VGE=15V •Generation4IGBTdesignprovidestighterparameterdistributionandhi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) ShortCircuitRatedFastIGBT Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=10A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A) Description InsulatedGateBipolarTransistors(IGBTs)fromInternationalRectifierhavehigherusablecurrentdensitiesthancomparablebipolartransistors,whileatthesametimehavingsimplergate-driverequirementsofthefamiliarpowerMOSFET.Theyprovidesubstantialbenefitstoahostof | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=6.5A) Description Co-packagedIGBTsareanaturalextensionofInternationalRectifierswellknownIGBTline.TheyprovidetheconvenienceofanIGBTandanultrafastrecoverydiodeinonepackage,resultinginsubstantialbenefitstoahostofhigh-voltage,high-current,motorcontrol,UPSandpowers | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=10A) 文件：497.6 Kbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT UFAST 600V 13A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
Fit Rate / Equivalent Device Hours 文件：98.39 Kbytes Page：35 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-220-3 包装：卷带（TR） 描述：IGBT W/DIODE 600V 13A TO-220AB 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IRGBC20产品属性
- 类型
描述
- 型号
IRGBC20
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=9.0A)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
23+ |
原厂原装 |
4000 |
全新原装 |
|||
Infineon |
22+ |
NA |
2118 |
加我QQ或微信咨询更多详细信息, |
|||
IR |
22+ |
TO-220 |
87264 |
终端免费提供样品 可开13%增值税发票 |
|||
IR |
23+ |
65480 |
|||||
IR/International Rectifier/国 |
21+ |
TO-263 |
560 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
NA/ |
3303 |
原装现货,当天可交货,原型号开票 |
|||
Infineon Technologies |
2022+ |
TO220AB |
6680 |
原厂原装，欢迎咨询 |
|||
IR |
TO-263 |
6000 |
原装现货,长期供应,终端可账期 |
||||
IR |
2022 |
TO220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
IRGBC20芯片相关品牌
IRGBC20规格书下载地址
IRGBC20参数引脚图相关
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IRGBC20数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流（Ic）（最大值）55A 集射极击穿电压（最大值）600V 类型- 不同Vge，Ic时的Vce（on）2.3V@15V，27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中，焕盛达-专注原装用芯服务；
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2019-5-8
DdatasheetPDF页码索引
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