IRFZ48N价格

参考价格:¥2.3220

型号:IRFZ48NPBF 品牌:INTERNATIONAL 备注:这里有IRFZ48N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ48N批发/采购报价,IRFZ48N行情走势销售排行榜,IRFZ48N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFZ48N

N-channel enhancement mode TrenchMOS transistor

N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowersuppliesandgenera

PhilipsROYAL PHILIPS

飞利浦荷兰皇家飞利浦

Philips
IRFZ48N

isc N-Channel MOSFET Transistor

•DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤14mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFZ48N

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFZ48N

Fast Switching

DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=64A@TC=25℃ •DrainSourceVoltage- :VDSS=55V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.014Ω(Max) •FastSwitching

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFZ48N

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

Advanced Process Technology

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Advanced Process Technology

Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

isc N-Channel MOSFET Transistor

•FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET Power MOSFET

Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-Channel 60-V (D-S) MOSFET

FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

N-Channel MOSFET Transistor

文件:338.6 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ADVANCED PROCESS TECHNOLOGY

文件:232.23 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:232.23 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:306.62 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ADVANCED PROCESS TECHNOLOGY

文件:306.62 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

IRFZ48N产品属性

  • 类型

    描述

  • 型号

    IRFZ48N

  • 功能描述

    MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-24 12:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon/英飞凌
23+
D2PAK
12700
买原装认准中赛美
IR
TO-263
6000
原装现货,长期供应,终端可账期
INFINEON
21+
TO-220
32290
全新原装 支持BOM配单
IR进口
23+
TO-220
66800
只上传原装现货
Infineon/英飞凌
2023+
D2PAK
6000
全新原装深圳仓库现货有单必成
IR
22+
TO-263
87755
Infineon
22+
TO-220-3
7000
原厂原装,价格优势!13246658303
IR
22+
TO-263
9000
原装正品
IR
23+
TO263
12000
全新原装优势
23+
N/A
85500
正品授权货源可靠

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