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IRFZ48N价格
参考价格:¥2.3220
型号:IRFZ48NPBF 品牌:INTERNATIONAL 备注:这里有IRFZ48N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ48N批发/采购报价,IRFZ48N行情走势销售排行榜,IRFZ48N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFZ48N | N-channel enhancement mode TrenchMOS transistor N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowersuppliesandgenera | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRFZ48N | isc N-Channel MOSFET Transistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤14mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperatio | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFZ48N | HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ48N | Fast Switching DESCRIPTION •Designedforuseinswitchmodepowersuppliesandgeneral purposeapplications. FEATURES •DrainCurrent–ID=64A@TC=25℃ •DrainSourceVoltage- :VDSS=55V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.014Ω(Max) •FastSwitching | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFZ48N | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,pr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
Advanced Process Technology Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology Description TheD2PakisasurfacemountpowerpackagecapableofaccommodatingdiesizesuptoHEX-4.Itprovidesthehighestpowercapabilityandthelowestpossibleon-resistanceinanyexistingsurfacemountpackage.TheD2Pakissuitableforhighcurrentapplicationsbecauseofitslowinter | KERSEMI Kersemi Electronic Co., Ltd. | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchi | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET Power MOSFET Description AdvancedHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-Channel 60-V (D-S) MOSFET FEATURES •175°CJunctionTemperature •TrenchFET®PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
N-Channel MOSFET Transistor 文件:338.6 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:232.23 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:232.23 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:306.62 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:306.62 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRFZ48N产品属性
- 类型
描述
- 型号
IRFZ48N
- 功能描述
MOSFET MOSFET, 55V, 64A, 14 mOhm, 54 nC Qg, TO-220AB
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
23+ |
D2PAK |
12700 |
买原装认准中赛美 |
|||
IR |
TO-263 |
6000 |
原装现货,长期供应,终端可账期 |
||||
INFINEON |
21+ |
TO-220 |
32290 |
全新原装 支持BOM配单 |
|||
IR进口 |
23+ |
TO-220 |
66800 |
只上传原装现货 |
|||
Infineon/英飞凌 |
2023+ |
D2PAK |
6000 |
全新原装深圳仓库现货有单必成 |
|||
IR |
22+ |
TO-263 |
87755 |
||||
Infineon |
22+ |
TO-220-3 |
7000 |
原厂原装,价格优势!13246658303 |
|||
IR |
22+ |
TO-263 |
9000 |
原装正品 |
|||
IR |
23+ |
TO263 |
12000 |
全新原装优势 |
|||
23+ |
N/A |
85500 |
正品授权货源可靠 |
IRFZ48N规格书下载地址
IRFZ48N参数引脚图相关
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- jumper
- jtag接口
- jk触发器
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- isd1420
- IRH4150
- IRH4054
- IRH3230
- IRH3150
- IRH3054
- IRGPH50
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- IRGPC40
- IRGBF30
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- IRGB430
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- IRFZ48ZSPBF
- IRFZ48Z
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- IRFZ48
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- IRFZ42
- IRFZ40
- IRFZ34S
- IRFZ34N
IRFZ48N数据表相关新闻
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属性参数值 商品目录IGBT管 集电极电流(Ic)(最大值)55A 集射极击穿电压(最大值)600V 类型- 不同Vge,Ic时的Vce(on)2.3V@15V,27A 栅极阈值电压-VGE(th)6V@250uA
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原装正品现货热卖中,焕盛达-专注原装用芯服务;
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元器件优质供应
2019-11-1
DdatasheetPDF页码索引
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