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IRFZ24N价格
参考价格:¥8.2276
型号:IRFZ24NHR 品牌:International Rectifier 备注:这里有IRFZ24N多少钱,2024年最近7天走势,今日出价,今日竞价,IRFZ24N批发/采购报价,IRFZ24N行情走势销售排行榜,IRFZ24N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRFZ24N | N-channel enhancement mode TrenchMOS transistor GENERALDESCRIPTION N-channelenhancementmodestandardlevelfield-effectpowertransistorinaplasticenvelopeusing’trench’technology.Thedevicefeaturesverylowon-stateresistanceandhasintegralzenerdiodesgivingESDprotectionupto2kV.Itisintendedforuseinswitchedmodepowe | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | ||
IRFZ24N | Power MOSFET (Vdss=55V, Rds(on)=0.07ohm, Id=17A) Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarew | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFZ24N | isc N-Channel MOSFET Transistor DESCRIPTION •Designedforlowvoltage,highspeedswitchingapplicationsin powersupplies,convertersandpowermotorcontrols,these devicesareparticularlywellsuitedforbridgecircuitswhere diodespeedandcommutatingsafeoperatingareasarecritical andofferadditional | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFZ24N | Advanced Process Technology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. ●AdvancedProcessT | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFZ24N | HEXFET Power MOSFET Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicethatHEXFETpowerMOSFETsarewellknow | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET PowerMOSFETVDSS=55V,RDS(on)=0.07mohm,ID=17A | TEL TRANSYS Electronics Limited | |||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-262(DPAK)packaging •Surfacemount •Highspeedswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET Power MOSFET ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provi | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET PowerMOSFETVDSS=55V,RDS(on)=0.07mohm,ID=17A | TEL TRANSYS Electronics Limited | |||
N-Channel 60 V (D-S) MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •SurfaceMount •AvailableinTapeandReel •DynamicdV/dtRating •Logic-LevelGateDrive •FastSwitching •ComplianttoRoHSDirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | |||
HEXFET Power MOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
isc N-Channel MOSFET Transistor •FEATURES •WithTO-263(D2PAK)packaging •Surfacemount •Highspeedswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperationz •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Advanced Process Technology 文件:169.9 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:247.79 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCED PROCESS TECHNOLOGY 文件:247.79 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology 文件:169.9 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology 文件:680.17 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology 文件:680.17 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Advanced Process Technology 文件:169.9 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 |
IRFZ24N产品属性
- 类型
描述
- 型号
IRFZ24N
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
Power MOSFET(Vdss=55V, Rds(on)=0.07ohm, Id=17A)
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
21+ |
TO-220AB |
900000 |
原装正品现货/订货 价格优惠 |
|||
IR |
TO-263 |
68900 |
原包原标签100%进口原装常备现货! |
||||
Infineon(英飞凌) |
23+ |
TO-220 |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
|||
IR/VISHAY |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon Technologies |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/IR |
1907+ |
NA |
800 |
20年老字号,原装优势长期供货 |
|||
IR |
2020+ |
TO220 |
350000 |
100%进口原装正品公司现货库存 |
|||
IR |
22+ |
TO-220 |
12680 |
||||
INFINEON/英飞凌 |
23+ |
TO-220 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
IR |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
IRFZ24N规格书下载地址
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DdatasheetPDF页码索引
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