IRFU120价格

参考价格:¥3.0634

型号:IRFU1205PBF 品牌:International 备注:这里有IRFU120多少钱,2024年最近7天走势,今日出价,今日竞价,IRFU120批发/采购报价,IRFU120行情走势销售排行榜,IRFU120报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFU120

8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRFU120

HEXFETPOWERMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFU120

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay
IRFU120

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFU120

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR120,SiHFR120) •Straightlead(IRFU120,SiHFU120) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9

VishayVishay Siliconix

威世科技

Vishay
IRFU120

N-ChannelMOSFETusesadvancedtrenchtechnology

文件:1.8679 Mbytes Page:4 Pages

DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.

杜因特深圳市杜因特半导体有限公司

DOINGTER
IRFU120

iscN-ChannelMOSFETTransistor

文件:345.17 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A??

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

UltraLowOn-Resistance

Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. •Ultr

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

ULTRALOWON-RESISTANCE

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

FastSwitching

VDSS=100V RDS(on)=0.21Ω ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

SurfaceMount(IRFR120N)StraightLead(IRFU120N)

VDSS=100V RDS(on)=0.21Ω ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IRFR120

DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest

VishayVishay Siliconix

威世科技

Vishay

HEXFETPOWERMOSFET

DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AUTOMOTIVEMOSFET

AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:246.49 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel60V(D-S)MOSFET

文件:995.84 Kbytes Page:7 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

iscN-ChannelMOSFETTransistor

文件:397.82 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AvalancheRuggedTechnology

文件:258.5 Kbytes Page:7 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

SurfaceMount(IRFR120N)

文件:3.73792 Mbytes Page:10 Pages

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

iscN-ChannelMOSFETTransistor

文件:247.26 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

N-Channel100-V(D-S)MOSFET

文件:1.08076 Mbytes Page:9 Pages

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

VBSEMI

HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.27廓,ID=7.7A)

文件:2.12101 Mbytes Page:10 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:838.17 Kbytes Page:13 Pages

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

文件:247.24 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PrecisionWirewoundResistors

100Series/SMSeries/PCSeries •Resistancesto6Megohms •ResistanceTolerancesto±0.005 •TemperatureCoeffcientsof±2ppm/°C •HighTCRAvailable(Balco&PlatinumWire) •100AcceptanceTested/TraceabletoNIST •LongTermStability/100ppm/year •MatchedResistanceSetst

Riedon

Riedon Inc.

Riedon

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

PRODUCTWELLProductwell Precision Elect.CO.,LTD

寶德華股台灣寶德華股有限公司

PRODUCTWELL

THREADEDINSERT,BLIND,REGULARHEADSTYLELIGHTDUTY-PRESSIN

文件:106.68 Kbytes Page:1 Pages

WITTEN

Witten Company, Inc.

WITTEN

PrecisionWirewoundResistors

文件:318.25 Kbytes Page:2 Pages

Riedon

Riedon Inc.

Riedon

TemperatureSensorsLineGuide

文件:736.09 Kbytes Page:11 Pages

HoneywellHoneywell Sensing and Productivity Solutions

霍尼韦尔霍尼韦尔国际

Honeywell

IRFU120产品属性

  • 类型

    描述

  • 型号

    IRFU120

  • 功能描述

    MOSFET N-Chan 100V 7.7 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-19 22:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2020+
TO-251
8000
只做自己库存,全新原装进口正品假一赔百,可开13%增
IR
21+
N/A
9999999
原装正品现货/订货 价格优惠可开票
Vishay Siliconix
23+
TO-251AA
30000
晶体管-分立半导体产品-原装正品
INFINEON/IR
1907+
NA
1050
20年老字号,原装优势长期供货
INFINEON/英飞凌
23+
TO-251
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
IR
2016+
TO-251
6528
房间原装进口现货假一赔十
IR
2020+
TO251
350000
100%进口原装正品公司现货库存
IRHAR
23+
原厂原装
4000
全新原装
IR
2020+
TO-251
22000
全新原装正品 现货库存 价格优势
VISHAY(威世)
23+
TO-251
7845
支持大陆交货,美金交易。原装现货库存。

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