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IRFR120价格
参考价格：￥4.2145
型号：IRFR120 品牌：Vishay 备注：这里有IRFR120多少钱，2024年最近7天走势，今日出价，今日竞价，IRFR120批发/采购报价，IRFR120行情走势销售排行榜，IRFR120报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR120 | 8.4A,100V,0.270Ohm,N-ChannelPowerMOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
IRFR120 | HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  | |
IRFR120 | IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 |  | |
IRFR120 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFR120 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR120,SiHFR120) •Straightlead(IRFU120,SiHFU120) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | | |
IRFR120 | iscN-ChannelMOSFETTransistor 文件：321.05 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | |
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Surface-mount(IRFR120,SiHFR120) •Straightlead(IRFU120,SiHFU120) •Availableintapeandreel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?9 | VishayVishay Siliconix 威世科技 | | | |
UltraLowOn-Resistance Description TheD-PAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thestraightleadversion(IRFUseries)isforthroughholemountingapplications.Powerdissipationlevelsupto1.5wattsarepossibleintypicalsurfacemountapplications. •Ultr | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET(Vdss=55V,Rds(on)=0.027ohm,Id=44A?? Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ULTRALOWON-RESISTANCE Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | KERSEMI Kersemi Electronic Co., Ltd. | | | |
UltraLowOn-Resistance Features VDS(V)=55V ID=44A(VGS=10V) RDS(ON)27m(VGS=10V) | UMWUMW 友台友台半导体 |  | | |
UltraLowOn-Resistance Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | UMWUMW 友台友台半导体 | | | |
FastSwitching VDSS=100V RDS(on)=0.21Ω ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SurfaceMount(IRFR120N)StraightLead(IRFU120N) VDSS=100V RDS(on)=0.21Ω ID=9.4A Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedes | KERSEMI Kersemi Electronic Co., Ltd. | | | |
TheD-PAKisdesignedforsurfacemountingusingvaporphase,infraredorwavesolderingtechniques. Features VDS(V)=100V ID=9.4A(VGS=10V) RDS(ON)=210mW(VGS=10V) | UMWUMW 友台友台半导体 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
HEXFETPOWERMOSFET DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •SurfaceMount(IRFR120) •Str | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
DynamicdV/dtRating DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
IRFR120 DESCRIPTION ThirdgenerationpowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Thest | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤190mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
AUTOMOTIVEMOSFET AUTOMOTIVEMOSFET Description SpecificallydesignedforAutomotiveapplications,thisHEXFET®PowerMOSFETutilizesthelatestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Additionalfeaturesofthisdesignarea175°Cjunctionoperatingtemperature,fastswitch | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-ChannelMOSFETTransistor 文件：334.65 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
ULTRALOWONRESISTANCE 文件：398.79 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ULTRALOWONRESISTANCE 文件：398.79 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel60-V(D-S)MOSFET 文件：988.71 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
UltraLowOn-Resistance 文件：4.02641 Mbytes Page：10 Pages | KERSEMI Kersemi Electronic Co., Ltd. | | | |
N-Channel60-V(D-S)MOSFET 文件：988.67 Kbytes Page：6 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
iscN-ChannelMOSFETTransistor 文件：373.61 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
AdvancedPowerMOSFET 文件：258.5 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
AvalancheRuggedTechnology 文件：258.5 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
N-ChannelMOSFETTransistor 文件：335.39 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
SurfaceMount(IRFR120N) 文件：396.01 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：396.01 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SurfaceMount(IRFR120N) 文件：396.01 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
ADVANCEDPROCESSTECHNOLOGY 文件：396.01 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-Channel100V(D-S)MOSFET 文件：979.62 Kbytes Page：7 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | | | |
UltraLowOn-Resistance 文件：249.71 Kbytes Page：11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPOWERMOSFET(VDSS=100V,RDS(on)=0.27廓,ID=7.7A) 文件：2.12101 Mbytes Page：10 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | |
IRFR120产品属性
- 类型
描述
- 型号
IRFR120
- 功能描述
MOSFET N-Chan 100V 7.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2016+ |
SOT-252 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON |
23+ |
K-H |
66000 |
只有原装,请来电咨询 |
|||
INTERNATIONALRECTIFIER |
2020+ |
NA |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
三年内 |
1983 |
纳立只做原装正品13590203865 |
|||||
Infineon(英飞凌) |
24+ |
TO-252-2(DPAK) |
690000 |
支持实单/只做原装 |
|||
Vishay Siliconix |
23+ |
D-Pak |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
21+ |
D-PAK |
900000 |
原装正品现货/订货 价格优惠 |
||||
IR |
07+ |
TO-252 |
9 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
VISHAY/威世 |
22+ |
TO-252-3(DPAK) |
100000 |
代理渠道/只做原装/可含税 |
|||
Infineon/英飞凌 |
21+ |
DPAK |
8800 |
公司只作原装正品 |
IRFR120芯片相关品牌
IRFR120规格书下载地址
IRFR120参数引脚图相关
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- jumper
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- isd1420
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- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR15N20DTRLP
- IRFR15N20DPBF
- IRFR13N20DTRPBF
- IRFR13N20DTRLP
- IRFR13N20DPBF
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120TRPBF-CUTTAPE
- IRFR120TRPBF
- IRFR120PBF
- IRFR120NTRPBF
- IRFR120NTRLPBF-CUTTAPE
- IRFR120NTRLPBF
- IRFR120NPBF
- IRFR1205TRPBF
- IRFR1205TRLPBF
- IRFR1205PBF
- IRFR110TRPBF-CUTTAPE
- IRFR110TRPBF
- IRFR110TRLPBF
- IRFR110PBF
- IRFR110
- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR024
- IRFR020TRPBF
- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
- IRFR010
- IRFQ110
- IRFPS43N50KPBF
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
IRFR120数据表相关新闻
IRFR15N20DTRPBF
表面贴装型N通道200V17A（Tc）3W（Ta），140W（Tc）D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生电话19926428992QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性参数值 商品目录场效应管(MOSFET) 漏源电压(Vdss)200V 连续漏极电流(Id)13A 功率(Pd)110W 导通电阻(RDS(on)@Vgs，Id)235mΩ10V，8A 阈值电压(Vgs(th)@Id)5.5V250μA 类型N沟道
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IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF原装现货供应0755-2889238913713856319QQ:2639752116
2021-3-12
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