IRFP250价格

参考价格:¥16.3743

型号:IRFP250 品牌:IXYS 备注:这里有IRFP250多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP250批发/采购报价,IRFP250行情走势销售排行榜,IRFP250报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFP250

N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STMICROELECTRONICS
IRFP250

N-ChannelPowerMosfets

SamsungSamsung Group

三星三星半导体

Samsung
IRFP250

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRFP250

N-Channel(HexfetTransistors)

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFP250

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFP250

StandardPowerMOSFET

N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols

IXYS

IXYS Integrated Circuits Division

IXYS
IRFP250

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve

VishayVishay Siliconix

威世科技

Vishay
IRFP250

HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries

FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert

IXYS

IXYS Integrated Circuits Division

IXYS
IRFP250

iscN-ChannelMOSFETTransistor

DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFP250

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技

Vishay
IRFP250

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2
IRFP250

PowerMOSFET

文件:1.49088 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFP250

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

文件:2.29184 Mbytes Page:7 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI
IRFP250

PowerMOSFET

文件:1.46833 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf

VishayVishay Siliconix

威世科技

Vishay

iscN-ChannelMOSFETTransistor

DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedPowerMOSFET

FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.071Ω(Typ.)

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

200VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

IRMOSFET?

Features AdvancedProcessTechnology Dynamicdv/dtRating 175°COperatingTemperature FastSwitching FullyAvalancheRated EaseofParalleling SimpleDriveRequirements Lead-Free Description IRMOSFET™technologyfromInfineonutilizes advancedprocessingtechniquesto

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A)

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.46833 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:1.49088 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

文件:2.43012 Mbytes Page:7 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

文件:2.4987 Mbytes Page:7 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

200VN-ChannelMOSFET

文件:451.54 Kbytes Page:7 Pages

ARTSCHIP

ARTSCHIP ELECTRONICS CO.,LMITED.

ARTSCHIP

ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs

文件:2.88166 Mbytes Page:8 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

N-ChannelMOSFETTransistor

文件:333.5 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET짰PowerMOSFET

文件:262.82 Kbytes Page:9 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs

文件:4.84983 Mbytes Page:8 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

AdvancedProcessTechnology

文件:642.71 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:642.71 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:169.52 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs

文件:2.82449 Mbytes Page:8 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

N-ChannelMOSFETTransistor

文件:333.48 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs

文件:2.8601 Mbytes Page:8 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

AdvancedProcessTechnology

文件:186.2 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

iscN-ChannelMOSFETTransistor

文件:272.64 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

AdvancedProcessTechnology

文件:186.2 Kbytes Page:8 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs

文件:2.40596 Mbytes Page:7 Pages

THINKISEMIThinki Semiconductor Co., Ltd.

思凯半导体思凯半导体有限公司

THINKISEMI

HEXFET짰PowerMOSFET

文件:3.34495 Mbytes Page:7 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:1.49088 Mbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Highpeakcurrentcarryingcapabilityupto6000A

文件:299.59 Kbytes Page:3 Pages

TECTE Connectivity Ltd

泰科电子泰科电子有限公司

TEC

DCaxialfans

文件:375.69 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:345.75 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:505.68 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

CommercialComposition9mmDiameterVariableResistors

文件:1.41052 Mbytes Page:4 Pages

CTSCTS Electronic Components

西迪斯西迪斯公司

CTS

IRFP250产品属性

  • 类型

    描述

  • 型号

    IRFP250

  • 功能描述

    MOSFET N-Chan 200V 30 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-3-28 19:50:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Vishay Siliconix
23+
TO-247AC
30000
晶体管-分立半导体产品-原装正品
INFINEON/IR
1907+
NA
49750
20年老字号,原装优势长期供货
23+
TO-247
20000
原厂原装正品现货
IR
2020+
TO-3P
350000
100%进口原装正品公司现货库存
INFINEON
21+
SMD
16230
十年信誉,只做原装,有挂就有现货!
INFINEON/英飞凌
23+
TO-247
76000
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13
IR
2020+
TO-247
9880
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
23+
管3P
18000
INFINEON
22+
sot
6600
正品渠道现货,终端可提供BOM表配单。
HA
23+
TO-3P
65480

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