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IRFP250价格
参考价格:¥16.3743
型号:IRFP250 品牌:IXYS 备注:这里有IRFP250多少钱,2024年最近7天走势,今日出价,今日竞价,IRFP250批发/采购报价,IRFP250行情走势销售排行榜,IRFP250报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFP250 | N-CHANNEL200V-0.073ohm-33ATO-247PowerMeshIIMOSFET DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0. | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRFP250 | N-ChannelPowerMosfets
| SamsungSamsung Group 三星三星半导体 | ||
IRFP250 | 200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRFP250 | N-Channel(HexfetTransistors)
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFP250 | PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFP250 | StandardPowerMOSFET N-ChannelEnhancementMode Features •InternationalstandardpackageJEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Highcommutatingdv/dtrating •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols | IXYS IXYS Integrated Circuits Division | ||
IRFP250 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve | VishayVishay Siliconix 威世科技 | ||
IRFP250 | HighVoltagePowerMOSFETDieN-ChannelEnhancementModeHighRuggednessSeries FEATURES: •Fastswitchingtimes •LowRDS(on)HDMOS™process •Ruggedpolysilicongatecellstructure •Excellenthighvoltagestability •Lowinputcapacitance •Improvedhightemperaturereliability APPLICATIONS: •Switchingpowersupplies •Motorcontrols •AudioAmplifiers •Invert | IXYS IXYS Integrated Circuits Division | ||
IRFP250 | iscN-ChannelMOSFETTransistor DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFP250 | PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | ||
IRFP250 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRFP250 | PowerMOSFET 文件:1.49088 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | ||
IRFP250 | ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.29184 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | ||
IRFP250 | PowerMOSFET 文件:1.46833 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
PowerMOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Isolatedcentralmountinghole •Fastswitching •EaseofParalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinf | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor DESCRIPTION ·Designedforuseinswitchmodepowersuppliesandgeneralpurposeapplications. FEATURES ·DrainCurrent–ID=32A@TC=25℃ ·DrainSourceVoltage- :VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.085Ω(Max) ·FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedPowerMOSFET FEATURES ■AvalancheRuggedTechnology ■RuggedGateOxideTechnology ■LowerInputCapacitance ■ImprovedGateCharge ■ExtendedSafeOperatingArea ■LowerLeakageCurrent:10μA(Max.)@VDS=200V ■LowRDS(ON):0.071Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
200VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary, planar,DMOStechnology. Features •32A,200V,RDS(on)=0.085Ω@VGS=10V •Lowgatecharge(typical95nC) •LowCrss(typical75pF) •Fastswitching •100ava | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
IRMOSFET? Features AdvancedProcessTechnology Dynamicdv/dtRating 175°COperatingTemperature FastSwitching FullyAvalancheRated EaseofParalleling SimpleDriveRequirements Lead-Free Description IRMOSFET™technologyfromInfineonutilizes advancedprocessingtechniquesto | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.075ohm,Id=30A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheTO-220packageisuniversiallypreferredforcommercial-industrialapplicationswherehigherpowerleve | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.46833 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET 文件:1.49088 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.43012 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.4987 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
200VN-ChannelMOSFET 文件:451.54 Kbytes Page:7 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:2.88166 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
N-ChannelMOSFETTransistor 文件:333.5 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET짰PowerMOSFET 文件:262.82 Kbytes Page:9 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:4.84983 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
AdvancedProcessTechnology 文件:642.71 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:642.71 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:169.52 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:2.82449 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
N-ChannelMOSFETTransistor 文件:333.48 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
ThinkiSemi200V,30AN-ChannelPlanarProcessPowerMOSFETs 文件:2.8601 Mbytes Page:8 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
AdvancedProcessTechnology 文件:186.2 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
iscN-ChannelMOSFETTransistor 文件:272.64 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
AdvancedProcessTechnology 文件:186.2 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ThinkiSemi200V,32AN-ChannelPlanarProcessPowerMOSFETs 文件:2.40596 Mbytes Page:7 Pages | THINKISEMIThinki Semiconductor Co., Ltd. 思凯半导体思凯半导体有限公司 | |||
HEXFET짰PowerMOSFET 文件:3.34495 Mbytes Page:7 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET 文件:1.49088 Mbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
Highpeakcurrentcarryingcapabilityupto6000A 文件:299.59 Kbytes Page:3 Pages | TECTE Connectivity Ltd 泰科电子泰科电子有限公司 | |||
DCaxialfans 文件:375.69 Kbytes Page:3 Pages | EBMPAPST ebm-papst | |||
DCaxialfans 文件:345.75 Kbytes Page:3 Pages | EBMPAPST ebm-papst | |||
DCaxialfans 文件:505.68 Kbytes Page:3 Pages | EBMPAPST ebm-papst | |||
CommercialComposition9mmDiameterVariableResistors 文件:1.41052 Mbytes Page:4 Pages | CTSCTS Electronic Components 西迪斯西迪斯公司 |
IRFP250产品属性
- 类型
描述
- 型号
IRFP250
- 功能描述
MOSFET N-Chan 200V 30 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Vishay Siliconix |
23+ |
TO-247AC |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
INFINEON/IR |
1907+ |
NA |
49750 |
20年老字号,原装优势长期供货 |
|||
23+ |
TO-247 |
20000 |
原厂原装正品现货 |
||||
IR |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
|||
INFINEON |
21+ |
SMD |
16230 |
十年信誉,只做原装,有挂就有现货! |
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INFINEON/英飞凌 |
23+ |
TO-247 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
IR |
2020+ |
TO-247 |
9880 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
23+ |
管3P |
18000 |
||||
INFINEON |
22+ |
sot |
6600 |
正品渠道现货,终端可提供BOM表配单。 |
|||
HA |
23+ |
TO-3P |
65480 |
IRFP250规格书下载地址
IRFP250参数引脚图相关
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- l100
- ku波段
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- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
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- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFP448
- IRFP440
- IRFP362
- IRFP360
- IRFP354
- IRFP353
- IRFP352
- IRFP351
- IRFP350
- IRFP344
- IRFP340
- IRFP32N50KPBF
- IRFP3206PBF
- IRFP31N50LPBF
- IRFP3077PBF
- IRFP3006PBF
- IRFP2907ZPBF
- IRFP2907PBF
- IRFP27N60KPBF
- IRFP26N60LPBF
- IRFP264PBF
- IRFP264
- IRFP260PBF
- IRFP260NPBF
- IRFP260NHR
- IRFP260MPBF
- IRFP260
- IRFP257
- IRFP256
- IRFP255
- IRFP254PBF
- IRFP254
- IRFP253
- IRFP252
- IRFP251
- IRFP250PBF
- IRFP250NPBF
- IRFP250MPBF
- IRFP247
- IRFP246
- IRFP245
- IRFP244PBF
- IRFP244
- IRFP240PBF
- IRFP240
- IRFP23N50LPBF
- IRFP22N60KPBF
- IRFP22N50APBF
- IRFP21N60LPBF
- IRFP17N50LPBF
- IRFP153
- IRFP152
- IRFP151
- IRFP150PBF
- IRFP150NPBF
- IRFP150MPBF
- IRFP150A
- IRFP150
- IRFP140PBF
- IRFP140NPBF
- IRFP1405PBF
- IRFP140
- IRFP133
- IRFP132
- IRFP131
- IRFP130
- IRFP064PBF
- IRFP064NPBF
- IRFP064
- IRFP054PBF
- IRFP054
- IRFP048
- IRFP044
- IRFNG50
- IRFNG40
IRFP250数据表相关新闻
IRFP064NPBF
IRFP064NPBF
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