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IRFL9014价格
参考价格：￥4.8568
型号：IRFL9014 品牌：VISHAY 备注：这里有IRFL9014多少钱，2024年最近7天走势，今日出价，今日竞价，IRFL9014批发/采购报价，IRFL9014行情走势销售排行榜，IRFL9014报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFL9014 | PowerMOSFET(Vdss=-60V,Rds(on)=0.50ohm,Id=-1.8A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFL9014 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 |  | |
IRFL9014 | RepetitiveAvalancheRated Description TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderingtechniques.Itsuniquepackagedesignallowsforeasyautomaticpick-andplaceaswithotherSOTorSOICpackagesbuthastheaddedadvantageofimprovedthermalperformanceduetoanenla | KERSEMI Kersemi Electronic Co., Ltd. |  | |
IRFL9014 | PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower | VishayVishay Siliconix 威世科技 | | |
IRFL9014 | PowerMOSFET 文件：177.41 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET FEATURES •Surface-mount •Availableintapeandreel •DynamicdV/dtrating •Repetitiveavalancherated •P-channel •Fastswitching •Easeofparalleling •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 DESCRIPTION Thirdgenerationpower | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
HEXFET짰PowerMOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountusingvaporphase,infrared,orwavesolderin | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
P-Channel60-V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100UISTested APPLICATIONS •LoadSwitch | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
PowerMOSFET 文件：177.41 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：174.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：174.72 Kbytes Page：8 Pages | VishayVishay Siliconix 威世科技 | | | |
TO-92Plastic-EncapsulateTransistors TO-92Plastic-EncapsulateTransistors NPNsilicon | DAYADaya Electric Group Co., Ltd. Daya Electric Group Co., Ltd. |  | | |
NPNSILICONTRANSISTOR FEATURES Powerdissipation PCM:0.4W(Tamb=25°C) Collectorcurrent ICM:0.1A Collector-basevoltage V(BR)CBO:50V | WINGSWing Shing Computer Components Wing Shing Computer Components |  | | |
NPNSiliconEpitaxialPlanarTransistor NPNSiliconEpitaxialPlanarTransistor forswitchingandAFamplifierapplications. Thetransistorissubdividedintofourgroups,A,B,C andD,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistorST9015is recommended. Onspecialrequest,thesetransistorscanbe | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 |  | | |
FairchildQFETforSynchronousRectification Introduction FairchildiscurrentlydevelopingandmarketinganewQFETseriesthathasimprovedRDS(on),gatecharge,andswitchingspeedcharacteristics.ThesuperiorfeaturesoftheseQFETsareveryusefulforincreasingtheefficiencyoflowoutputvoltagepowersupplies,makingitspecially | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
NPNEPITAXIALSILICONTRANSISTOR PRE-AMPLIFIER,LOWLEVEL&LOWNOISE FEATURES *Hightotalpowerdissipation.(450mW) *ExcellenthFElinearity. *ComplementarytoUTC9015 | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | |
IRFL9014产品属性
- 类型
描述
- 型号
IRFL9014
- 功能描述
MOSFET P-Chan 60V 1.8 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY |
2020+ |
SOT-223 |
8000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
IR |
21+ |
T0-220 |
888888 |
原装正品现货/订货 价格优惠可开票 |
|||
Vishay Siliconix |
23+ |
SOT-223 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
2020+ |
标准封装 |
350000 |
100%进口原装正品公司现货库存 |
|||
TOREX(特瑞仕) |
23+ |
USPN-4(0.9x1.2) |
5000 |
诚信服务,绝对原装原盘。 |
|||
23+ |
原厂封装 |
9888 |
专做原装正品,假一罚百! |
||||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
VISHAY |
2020+ |
SOT-223 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY/威世 |
21+ |
SOT-223 |
500 |
全新、原装 |
|||
VISHAY |
23+ |
SOT223 |
7750 |
全新原装优势 |
IRFL9014芯片相关品牌
IRFL9014规格书下载地址
IRFL9014参数引脚图相关
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2019-3-7
DdatasheetPDF页码索引
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