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IRFL014价格
参考价格：￥0.7740
型号：IRFL014NPBF 品牌：INTERNATIONAL 备注：这里有IRFL014多少钱，2024年最近7天走势，今日出价，今日竞价，IRFL014批发/采购报价，IRFL014行情走势销售排行榜，IRFL014报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFL014 | PowerMOSFET(Vdss=60V,Rds(on)=0.20ohm,Id=2.7A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •FastSwitching •E | IRFInternational Rectifier 英飞凌英飞凌科技公司 |  |   |
IRFL014 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 |  | |
IRFL014 | PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
IRFL014 | PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | |
PowerMOSFET(Vdss=55V,Rds(on)=0.16ohm,Id=1.9A) Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
HEXFETPowerMOSFET Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
N-ChannelEnhancementModePowerMOSFET GENERALFEATURES 60V,4A,Rps(on)=85mQ@Vgs=10V. Rpsion)=100mQ@Vgs=4.5V. HighdensecelldesignforextremelylowRps(on)- Ruggedandreliable. Leadfreeproductisacquired. SOT-223package. | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟電子台舟電子股份有限公司 |  | | |
AdvancedProcessTechnology Description FifthGenerationHEXFET®MOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFET®powerMOSFETsarewellknownfor | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
SurfaceMount,FastSwitching DESCRIPTION ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •FastSwitching •Eas | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheSOT-223packageisdesignedforsurface-mountingusingvaporphase,infrared,orwavesolderingtechniq | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：296.72 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
AdvancedProcessTechnology 文件：164.33 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
AdvancedProcessTechnology 文件：164.33 Kbytes Page：8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：1.0036 Mbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：296.72 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
PowerMOSFET 文件：296.72 Kbytes Page：9 Pages | VishayVishay Siliconix 威世科技 | | | |
Fieldreplaceablebearingsandelectronics 文件：899.27 Kbytes Page：1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
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EFD20HIGHFREQUENCYPoETRANSFORMER 文件：280.38 Kbytes Page：1 Pages | ALLIED Allied Components International |  | | |
Implement3.3VdualusingAIC1730 文件：98.78 Kbytes Page：6 Pages | AIC AIC |  | | |
PolySwitchResettableDevices 文件：289.55 Kbytes Page：26 Pages | MACOM Tyco Electronics |  | |
IRFL014产品属性
- 类型
描述
- 型号
IRFL014
- 功能描述
MOSFET N-Chan 60V 2.7 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Vishay Siliconix |
21+ |
TO2614 TO261AA |
13880 |
公司只售原装,支持实单 |
|||
VISHAY/威世 |
23+ |
SOT-223 |
76000 |
IR英飞凌VISHAY专做 全新原装进口正品假一赔百,可开13 |
|||
IR |
2016+ |
SOT223 |
7380 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
IR |
22+ |
SOT223 |
672 |
原装现货假一赔十 |
|||
IR |
23+ |
PLCC44 |
18000 |
||||
IR |
2020+ |
SOT-223 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY(威世) |
23+ |
SOT-223-3 |
9555 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON |
21+ |
SOT-223-4 |
60000 |
原装正品进口现货 |
|||
IR |
0807+ |
SOT223 |
639 |
公司原装现货,可来看货! |
|||
IR |
23+ |
SOT-223 |
7600 |
全新原装现货 |
IRFL014芯片相关品牌
IRFL014规格书下载地址
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2019-3-7
DdatasheetPDF页码索引
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