IRFBE30价格

参考价格:¥23.7214

型号:IRFBE30 品牌:Vishay 备注:这里有IRFBE30多少钱,2024年最近7天走势,今日出价,今日竞价,IRFBE30批发/采购报价,IRFBE30行情走势销售排行榜,IRFBE30报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRFBE30

Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A)

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRFBE30

Dynamic dV/dt Rating Repetitive Avalanche Rated

DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES •Dynam

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRFBE30

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRFBE30

Power MOSFET

文件:585.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFBE30

Power MOSFET

文件:1.45144 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay
IRFBE30

Power MOSFET

文件:1.60026 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰 Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay

HEXFET짰 Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay

HEXFET Power MOSFET

Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:1.60026 Mbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:585.44 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:1.45144 Mbytes Page:8 Pages

VishayVishay Siliconix

威世科技

Vishay

isc N-Channel MOSFET Transistor

文件:309.79 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

Power MOSFET

文件:511.66 Kbytes Page:11 Pages

VishayVishay Siliconix

威世科技

Vishay

IRFBE30产品属性

  • 类型

    描述

  • 型号

    IRFBE30

  • 功能描述

    MOSFET 800V Single N-Channel HEXFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-3-28 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
VISH
三年内
1983
纳立只做原装正品13590203865
IR
2020+
TO-220
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
VISHAY
22+
T0-220AB
999999
IRFBE30PBF原装正品现货
Vishay Siliconix
23+
TO-220AB
30000
晶体管-分立半导体产品-原装正品
IR
2021+
TO220
16800
全新原装正品,自家优势现货
VISHAY
2020+
TO-220
9600
百分百原装正品 真实公司现货库存 本公司只做原装 可
VISHAY
23+
TO-220
65400
VISHAY/威世
22+
TO-220
9800
只做原装正品假一赔十!正规渠道订货!
VISHAY/威世
21+
TO-220
989
全新、原装

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