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IRFBE30价格
参考价格:¥23.7214
型号:IRFBE30 品牌:Vishay 备注:这里有IRFBE30多少钱,2024年最近7天走势,今日出价,今日竞价,IRFBE30批发/采购报价,IRFBE30行情走势销售排行榜,IRFBE30报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRFBE30 | Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRFBE30 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50W.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. FEATURES •Dynam | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRFBE30 | isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent–ID=4.1A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance RDS(on)=3Ω(Max)@VGS=10V ·100avalanchetested DESCRIPTION ·motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRFBE30 | Power MOSFET 文件:585.44 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
IRFBE30 | Power MOSFET 文件:1.45144 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | ||
IRFBE30 | Power MOSFET 文件:1.60026 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
HEXFET짰 Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | |||
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | |||
HEXFET짰 Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | |||
HEXFET Power MOSFET Description ThirdGenerationHEXFETsfromInternationalRectifierprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. ODynamicdv/dtRating ORepetitiveAvalancheRated OFastSwitching OEaseofPa | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | |||
Power MOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofP | VishayVishay Siliconix 威世科技 | |||
Power MOSFET FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare R | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:1.60026 Mbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:585.44 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:511.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:511.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:1.45144 Mbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | |||
isc N-Channel MOSFET Transistor 文件:309.79 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
Power MOSFET 文件:511.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:511.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:511.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 | |||
Power MOSFET 文件:511.66 Kbytes Page:11 Pages | VishayVishay Siliconix 威世科技 |
IRFBE30产品属性
- 类型
描述
- 型号
IRFBE30
- 功能描述
MOSFET 800V Single N-Channel HEXFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
2016+ |
TO220 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
VISH |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
IR |
2020+ |
TO-220 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
VISHAY |
22+ |
T0-220AB |
999999 |
IRFBE30PBF原装正品现货 |
|||
Vishay Siliconix |
23+ |
TO-220AB |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
IR |
2021+ |
TO220 |
16800 |
全新原装正品,自家优势现货 |
|||
VISHAY |
2020+ |
TO-220 |
9600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
VISHAY |
23+ |
TO-220 |
65400 |
||||
VISHAY/威世 |
22+ |
TO-220 |
9800 |
只做原装正品假一赔十!正规渠道订货! |
|||
VISHAY/威世 |
21+ |
TO-220 |
989 |
全新、原装 |
IRFBE30规格书下载地址
IRFBE30参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFD121
- IRFD120
- IRFD113
- IRFD112
- IRFD110PBF
- IRFD110
- IRFD024PBF
- IRFD024
- IRFD022
- IRFD020PBF
- IRFD020
- IRFD014PBF
- IRFD014
- IRFD012
- IRFD010PBF
- IRFD010
- IRFC450
- IRFC350
- IRFC250
- IRFC240
- IRFC150
- IRFBG30PBF
- IRFBG30
- IRFBG20PBF
- IRFBG20
- IRFBF30PBF
- IRFBF30
- IRFBF20STRRPBF
- IRFBF20STRLPBF
- IRFBF20SPBF
- IRFBF20PBF
- IRFBF20LPBF
- IRFBF20
- IRFBE30STRLPBF
- IRFBE30SPBF
- IRFBE30PBF
- IRFBE30LPBF
- IRFBE20PBF
- IRFBE20
- IRFBC42
- IRFBC40STRLPBF
- IRFBC40PBF
- IRFBC40LCPBF
- IRFBC40ASTRLPBF
- IRFBC40ASPBF
- IRFBC40APBF
- IRFBC40
- IRFBC30STRLPBF
- IRFBC30SPBF
- IRFBC30PBF
- IRFBC30ASPBF
- IRFBC30APBF
- IRFBC30ALPBF
- IRFBC30A
- IRFBC30
- IRFBC20SPBF
- IRFBC20PBF
- IRFBC20
- IRFBA90N20DPBF
- IRFB812
- IRFB260
- IRFAG50
- IRFAG40
- IRFAG30
- IRFAF50
- IRFAF40
- IRFAF30
- IRFAE50
- IRFAE40
- IRFAE30
- IRFAC42
- IRFAC40
- IRFAC30
- IRF9Z34
IRFBE30数据表相关新闻
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2019-5-5
DdatasheetPDF页码索引
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