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IRF740价格
参考价格:¥19.2827
型号:IRF740 品牌:Vishay 备注:这里有IRF740多少钱,2024年最近7天走势,今日出价,今日竞价,IRF740批发/采购报价,IRF740行情走势销售排行榜,IRF740报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF740 | 400VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF740 | N-ChannelPowerMOSFETs,10A,350V/400V
| FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF740 | N-CHANNEL400V-0.48ohm-10A-TO-220PowerMESH]MOSFET ThispowerMOSFETisdesignedusingthecompany’sconsolidatedstriplayout-basedMESHOVERLAYprocess.Thistechnologymatchesandimprovestheperformancescomparedwithstandardpartsfromvarioussources. 1.HIGHCURRENTSWITCHING 2.UNINTERRUPTIBLEPOWERSUPPLY(U | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | ||
IRF740 | PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati | VishayVishay Siliconix 威世科技 | ||
IRF740 | POWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | SUNTACSuntac Electronic Corp. Suntac Electronic Corp. | ||
IRF740 | TECHNICALSPECIFICATIONSOFN-CHANNELPOWERMOSFET Designedtowithstandhighenergyintheavalanchemodeandswitchefficiently.Alsoofferadrain-to-sourcediodewithfastrecoverytime.Designedforhighvoltage,highspeedapplicationssuchaspowersupplies,PWMmotorcontrolsandotherinductiveloads,theavalancheenergycapabilityis | DCCOMDc Components 直流元件直流元件有限公司 | ||
IRF740 | 10A,400V,0.550Ohm,N-ChannelPowerMOSFET 10A,400V,0.550Ohm,N-ChannelPowerMOSFET ThisN-ChannelenhancementmodesilicongatepowerfieldeffecttransistorisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsar | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | ||
IRF740 | 10A400VNCHANNELPOWERMOSFET GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyeffic | FCI Amphenol ICC | ||
IRF740 | N-ChannelPowerMOSFET DESCRIPTION TheNellIRF740areN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.Theyaredesigned,testedandguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation. Theyaredesignedasanextremelyefficientandreliabledevice | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | ||
IRF740 | iscN-ChannelMOSFETTransistor •DESCRITION •Switchmodepowersupply •Uninterruptablepowersupply •Highspeedpowerswitching •FEATURES •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed •MinimumLot-to-Lotvariationsforrobustdev | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF740 | N-ChannelMOSFETTransistor DESCRIPTION •DrainCurrent-ID=10A@TC=25°C •DrainSourceVoltage- :VDSS=400V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) •FastSwitchingSpeed APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersup | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF740 | PowerMOSFET 文件:276.83 Kbytes Page:9 Pages | VishayVishay Siliconix 威世科技 | ||
IRF740 | N-ChannelPowerMOSFETs 文件:345.62 Kbytes Page:5 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ||
IRF740 | SEMICONDUCTORS 文件:2.43533 Mbytes Page:31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | ||
IRF740 | PowerMOSFET 文件:157.74 Kbytes Page:8 Pages | VishayVishay Siliconix 威世科技 | ||
N-ChannelMOSFET CompatiblewithExistingSurfaceMountTechniques RoHSCompliant,Halogen-Free Features VDS(V)=20V RDS(ON)22m(VGS=4.5V) | UMWUMW 友台友台半导体 | |||
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
PowerMOSFET(Vdss=20V,Rds(on)=0.022ohm) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor, | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFET CompatiblewithExistingSurfaceMountTechniques RoHSCompliant,Halogen-Free Features VDS(V)=20V RDS(ON)22m(VGS=4.5V) | UMWUMW 友台友台半导体 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechnology Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechnology Description FifthGenerationHEXFET®powerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETpowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
GenerationVTechology GenerationVTechology UltraLowOn-ResistanceNChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free Features Description TheSOP-8hasbeenmodifiedthrouahacustomizedleadframe forenhancedthermalcharacteristicsandmultiple-diecapability makingitidealin | UMWUMW 友台友台半导体 | |||
GenerationVTechology GenerationVTechology UltraLowOn-ResistanceNChannelMosfet SurfaceMount Dynamicdv/dtRating FastSwitching Lead-Free Features Description TheSOP-8hasbeenmodifiedthrouahacustomizedleadframe forenhancedthermalcharacteristicsandmultiple-diecapability makingitidealin | UMWUMW 友台友台半导体 | |||
GenerationVTechnology Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
P-ChannelMOSFET Features ®VDs(VE-55V ®Rps(ON) | UMWUMW 友台友台半导体 | |||
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ThermoelectricCoolerController GENERALDESCRIPTION TheADN8830isamonolithiccontrollerthatdrivesathermoelectriccooler(TEC)tostabilizethetemperatureofalaserdiodeorapassivecomponentusedintelecommunicationsequipment. Thisdevicereliesonanegativetemperaturecoefficient(NTC)thermistortosenset | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | |||
HEXFETPowerMOSFET
| IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET(VDSS=-20V,RDS(on)=0.040廓) Description TheseHEXFET®PowerMOSFETsinpackageutilizethelastestprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.AdditionalfeaturesoftheseHEXFETPowerMOSFETsarea150°Cjunctionoperatingtemperature,fastswitchingspeedandimprovedrepetitiveavalanch | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
P-ChannelMOSFET Features ®VDs(VE-55V ®Rps(ON) | UMWUMW 友台友台半导体 | |||
P-Channel30V(D-S)MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframe forenhancedthermacharacteristicsandmultiple-diecapability makingitidealinavarietyofpowerapplications.Withthese improvementsmultipledevicescanbeusedinanapplication withdramaticallyreducedboards | UMWUMW 友台友台半导体 | |||
HEXFETPOWERMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachievethelowestpossibleon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,p | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
P-Channel30V(D-S)MOSFET Description TheSOP-8hasbeenmodifiedthroughacustomizedleadframe forenhancedthermacharacteristicsandmultiple-diecapability makingitidealinavarietyofpowerapplications.Withthese improvementsmultipledevicescanbeusedinanapplication withdramaticallyreducedboards | UMWUMW 友台友台半导体 | |||
HEXFETPowerMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
SwitchModePowerSupply(SMPS) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowgatechargeQgresultsincimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
SMPSMOSFET SMPSMOSFET Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •EffectiveCossSpecified •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •SwitchModePower | VishayVishay Siliconix 威世科技 | |||
SwitchModePowerSupply(SMPS) Benefits ●LowGateChargeQgresultsinSimpleDriveRequirement ●ImprovedGate,Avalancheanddynamicdv/dtRuggedness ●FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent ●EffectiveCossspecified(SeeAN1001) Applications ●SwitchModePowerSupply(SMPS) ●Uninterr | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowgatechargeQgresultsincimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowgatechargeQgresultsincimpledrive requirement •Improvedgate,avalanche,anddynamicdV/dt ruggedness •Fullycharacterizedcapacitanceandavalanche voltageandcurrent •EffectiveCossspecified •Materialcategorization:fordefinitionsofcompliance pleaseseewww | VishayVishay Siliconix 威世科技 | |||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=10A@TC=25℃ ·DrainSourceVoltage- :VDSS=400V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconverte | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
SMPSMOSFET Applications SwitchModePowerSupply(SMPS) UninterruptablePowerSupply Highspeedpowerswitching Lead-Free Benefits LowGateChargeQgresultsinSimpleDriveRequirement ImprovedGate,Avalancheanddynamicdv/dtRuggedness FullyCharacterizedCapacitanceandAvalancheVoltageandC | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 | |||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceand AvalancheVoltageandCurrent •EffectiveCossspecified(AN1001) •Lead(Pb)-freeAvailable APPLICATIONS •SwitchMod | VishayVishay Siliconix 威世科技 |
IRF740产品属性
- 类型
描述
- 型号
IRF740
- 功能描述
MOSFET N-Chan 400V 10 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS(导通)
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220 |
16900 |
支持样品,原装现货,提供技术支持! |
|||
VISH |
三年内 |
1983 |
纳立只做原装正品13590203865 |
||||
VISHAY |
23+ |
N/A |
13600 |
只做原装 |
|||
INFINEON |
2022+ |
7600 |
原厂原装,假一罚十 |
||||
VISHAY |
2022+ |
TO-220 |
95000 |
100%进口原装正品现货,公司原装现货众多欢迎加微信咨 |
|||
SEC |
2020+ |
TO-220 |
16800 |
绝对原装进口现货,假一赔十,价格优势!? |
|||
IR |
23+ |
SOP-8 |
8238 |
||||
VISHAY/威世 |
2023+ |
5951 |
|||||
IR |
2023+ |
TO-263 |
5800 |
进口原装,现货热卖 |
|||
友台 |
23+ |
SOP-8 |
10500 |
优势原装现货假一赔十 |
IRF740规格书下载地址
IRF740参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
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- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRF7450
- IRF744
- IRF7433
- IRF743
- IRF7425
- IRF7424
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- IRF742
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- IRF7410
- IRF741
- IRF740S
- IRF740BPBF
- IRF740B
- IRF740ASTRLPBF
- IRF740ASPBF
- IRF740APBF
- IRF740ALPBF
- IRF740A
- IRF7406TRPBF-CUTTAPE
- IRF7406TRPBF
- IRF7406PBF
- IRF7406GTRPBF
- IRF7406
- IRF7404TRPBF-CUTTAPE
- IRF7404TRPBF
- IRF7404PBF
- IRF7404
- IRF7403TRPBF-CUTTAPE
- IRF7403TRPBF
- IRF7403PBF
- IRF7403
- IRF7402TRPBF
- IRF7402PBF
- IRF7402
- IRF7401TRPBF
- IRF7401PBF
- IRF7401
- IRF7389TRPBF
- IRF7389PBF
- IRF7389
- IRF7380TRPBF-CUTTAPE
- IRF7380TRPBF
- IRF7380PBF
- IRF7380
- IRF7379TRPBF
- IRF7379
- IRF7353D2TR
- IRF7351TRPBF
- IRF7351PBF
- IRF7350
- IRF7343TRPBF-CUTTAPE
- IRF7343TRPBF
- IRF7343PBF
- IRF7343
- IRF7342TRPBF/BKN
- IRF7342TRPBF
- IRF7342PBF
- IRF7342D2PBF
- IRF7342
- IRF7341TRPBF-CUTTAPE
- IRF7341TRPBF
- IRF7341PBF
- IRF7341
- IRF734
- IRF7338TRPBF
- IRF7338
- IRF7331
- IRF733
- IRF7329
- IRF7328
- IRF7325
- IRF7324
- IRF732
- IRF7319
- IRF7317
- IRF7316
- IRF7314
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DdatasheetPDF页码索引
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