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IRF640N价格
参考价格:¥5.7412
型号:IRF640NLPBF 品牌:INTERNATIONAL 备注:这里有IRF640N多少钱,2024年最近7天走势,今日出价,今日竞价,IRF640N批发/采购报价,IRF640N行情走势销售排行榜,IRF640N报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
IRF640N | PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF640N | N-ChannelPowerMOSFETs200V,18A,0.15ohm Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF640N | N-ChannelMOSFETTransistor •DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤150mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF640N | AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | ||
IRF640N | AdvancedProcessTechnology 文件:248.99 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
IRF640N | N-ChannelMOSFETTransistor 文件:338.66 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
IRF640N | HEXFETPowerMOSFET 文件:240.04 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | ||
N-ChannelPowerMOSFETs200V,18A,0.15ohm Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-262packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplic | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | KERSEMI Kersemi Electronic Co., Ltd. | |||
AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A) Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelPowerMOSFETs200V,18A,0.15ohm Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
AdvancedProcessTechnology Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFET짰PowerMOSFET Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow | KERSEMI Kersemi Electronic Co., Ltd. | |||
HEXFETPowerMOSFET 文件:240.04 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor 文件:338.66 Kbytes Page:2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET 文件:240.04 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:248.99 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:248.99 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET 文件:240.04 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:248.99 Kbytes Page:12 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
AdvancedProcessTechnology 文件:341.59 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
MINIATUREFUSEHOLDERS 文件:113.57 Kbytes Page:1 Pages | LittelfuseLittelfuse Inc. 力特力特公司 | |||
QuartzStability 文件:141.46 Kbytes Page:3 Pages | OSCILENT Oscilent Corporation | |||
3M??Scotch짰TransparentFilmTape640 文件:567.23 Kbytes Page:6 Pages | 3MMinnesota Mining and Manufacturing 明尼苏达矿务明尼苏达矿务及制造业公司 | |||
PULSETRANSFORMERS 文件:155.55 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | |||
PULSETRANSFORMERS 文件:155.55 Kbytes Page:1 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |
IRF640N产品属性
- 类型
描述
- 型号
IRF640N
- 功能描述
MOSFET N-CH 200V 18A TO-220AB
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道,金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds(最大)@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A,10V Id 时的
- Vgs(th)(最大)
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON TECHNOLOGIES |
23+ |
NA |
2000 |
全新、原装 |
|||
IR |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
IR |
21+ |
D2PAK |
12880 |
公司只做原装,诚信经营 |
|||
IR |
22+ |
TO-220 |
354000 |
||||
IR |
23+ |
NA |
30000 |
有挂就有货,只做原装免费送样,可BOM配单 |
|||
IR |
22+ |
TO-263 |
86704 |
||||
IR |
21+ |
25000 |
原厂原包 深圳现货 主打品牌 假一赔百 可开票! |
||||
IR |
2339+ |
TO-263 |
5825 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
|||
IOR |
2020+ |
TO-263 |
99 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
IR |
23+ |
PLCC |
18000 |
IRF640N规格书下载地址
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DdatasheetPDF页码索引
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