IRF640N价格

参考价格:¥5.7412

型号:IRF640NLPBF 品牌:INTERNATIONAL 备注:这里有IRF640N多少钱,2024年最近7天走势,今日出价,今日竞价,IRF640N批发/采购报价,IRF640N行情走势销售排行榜,IRF640N报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF640N

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF640N

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild
IRF640N

N-ChannelMOSFETTransistor

•DESCRITION •Efficientandreliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤150mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandre

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF640N

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI
IRF640N

AdvancedProcessTechnology

文件:248.99 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF
IRF640N

N-ChannelMOSFETTransistor

文件:338.66 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC
IRF640N

HEXFETPowerMOSFET

文件:240.04 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

IscN-ChannelMOSFETTransistor

•FEATURES •WithTO-262packaging •Highspeedswitching •Lowgateinputresistance •Standardlevelgatedrive •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Powersupply •Switchingapplic

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET(Vdss=200V,Rds(on)=0.15ohm,Id=18A)

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelPowerMOSFETs200V,18A,0.15ohm

Features •UltraLowOn-Resistance -rDS(ON)=0.102Ω(Typ),VGS=10V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels •PeakCurrentvsPulseWidthCurve •UISRateingCurve

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

AdvancedProcessTechnology

Description TheTO-220packageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipationlevelstoapproximately50watts.ThelowthermalresistanceandlowpackagecostoftheTO-220contributetoitswideacceptancethroughouttheindustry. TheD2Pakisasurfac

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFET짰PowerMOSFET

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnologyDynamicdv/dtRating175OperatingTemperature

Description FifthGenerationHEXFET®PowerMOSFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknow

KERSEMI

Kersemi Electronic Co., Ltd.

KERSEMI

HEXFETPowerMOSFET

文件:240.04 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

N-ChannelMOSFETTransistor

文件:338.66 Kbytes Page:2 Pages

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

HEXFETPowerMOSFET

文件:240.04 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:248.99 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:248.99 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

HEXFETPowerMOSFET

文件:240.04 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:248.99 Kbytes Page:12 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

AdvancedProcessTechnology

文件:341.59 Kbytes Page:11 Pages

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

MINIATUREFUSEHOLDERS

文件:113.57 Kbytes Page:1 Pages

LittelfuseLittelfuse Inc.

力特力特公司

Littelfuse

QuartzStability

文件:141.46 Kbytes Page:3 Pages

OSCILENT

Oscilent Corporation

OSCILENT

3M??Scotch짰TransparentFilmTape640

文件:567.23 Kbytes Page:6 Pages

3MMinnesota Mining and Manufacturing

明尼苏达矿务明尼苏达矿务及制造业公司

3M

PULSETRANSFORMERS

文件:155.55 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

PULSETRANSFORMERS

文件:155.55 Kbytes Page:1 Pages

etc2List of Unclassifed Manufacturers

etc2未分类制造商

etc2

IRF640N产品属性

  • 类型

    描述

  • 型号

    IRF640N

  • 功能描述

    MOSFET N-CH 200V 18A TO-220AB

  • RoHS

  • 类别

    分离式半导体产品 >> FET - 单

  • 系列

    HEXFET®

  • 标准包装

    1,000

  • 系列

    MESH OVERLAY™ FET

  • MOSFET N 通道,金属氧化物 FET

  • 特点

    逻辑电平门

  • 漏极至源极电压(Vdss)

    200V 电流 - 连续漏极(Id) @ 25°

  • C

    18A 开态Rds(最大)@ Id, Vgs @ 25°

  • C

    180 毫欧 @ 9A,10V Id 时的

  • Vgs(th)(最大)

    4V @ 250µA 闸电荷(Qg) @

  • Vgs

    72nC @ 10V 输入电容(Ciss) @

  • Vds

    1560pF @ 25V 功率 -

  • 最大

    40W

  • 安装类型

    通孔

  • 封装/外壳

    TO-220-3 整包

  • 供应商设备封装

    TO-220FP

  • 包装

    管件

更新时间:2024-3-28 18:14:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON TECHNOLOGIES
23+
NA
2000
全新、原装
IR
22+
35000
OEM工厂,中国区10年优质供应商!
IR
21+
D2PAK
12880
公司只做原装,诚信经营
IR
22+
TO-220
354000
IR
23+
NA
30000
有挂就有货,只做原装免费送样,可BOM配单
IR
22+
TO-263
86704
IR
21+
25000
原厂原包 深圳现货 主打品牌 假一赔百 可开票!
IR
2339+
TO-263
5825
公司原厂原装现货假一罚十!特价出售!强势库存!
IOR
2020+
TO-263
99
百分百原装正品 真实公司现货库存 本公司只做原装 可
IR
23+
PLCC
18000

IRF640N芯片相关品牌

  • ANAREN
  • CDE
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  • Cypress
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  • ILSI
  • NKK
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  • WALSIN
  • WURTH

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