IRF614价格

参考价格:¥2.7595

型号:IRF614SPBF 品牌:Vishay 备注:这里有IRF614多少钱,2024年最近7天走势,今日出价,今日竞价,IRF614批发/采购报价,IRF614行情走势销售排行榜,IRF614报价。
型号 功能描述 生产厂家&企业 LOGO 操作
IRF614

2.0A,250V,2.0Ohm,N-ChannelPowerMOSFET

Description ThisisanN-Channelenhancementmodesilicongatepowerfieldeffecttransistor.ItisanadvancedpowerMOSFETdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.ThispowerMOSFETisdesignedforapplicationssuch

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

Intersil
IRF614

EaseofParalleling

DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220ABpackageisuniversallypreferredforallcommercial-industrialapplicationsatpowerdissipati

VishayVishay Siliconix

威世科技

Vishay
IRF614

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay
IRF614

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=2.7A@TC=25℃ ·DrainSourceVoltage-VDSS=250V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.0Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

PowerMOSFET

FEATURES •DynamicdV/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatasheetprovidesinformationaboutpartsthatare RoH

VishayVishay Siliconix

威世科技

Vishay

N-ChannelMosfetTransistor

•DESCRITION •Designedforhighspeedapplications,suchasswitchingpowersupplies,ACandDCmotorcontrols,relayandsolenoiddriversandotherpulse. •FEATURES •LowRDS(on) •VGSRatedat±30V •SiliconGateforFastSwitchingSpeed •Rugged •LowDriveRequirements

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISC

250VN-ChannelMOSFET

GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

Fairchild

hexfetpowermosfet

HEXFETPowerMOSFET •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •SurfaceMount •EaseofParalleling •SimpleDriveRequirements •Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

FEATURES •Surface-mount •Availableintapeandreel •Dynamicdv/dtrating •Repetitiveavalancherated •Fastswitching •Easeofparalleling •Simpledriverequirements •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 Note *Thisdatashee

VishayVishay Siliconix

威世科技

Vishay

HEXFETPowerMOSFET

HEXFETPowerMOSFET •SurfaceMount •AvailableinTape&Reel •DynamicdV/dtRating •RepetitiveAvalancheRated •FastSwitching •EaseofParalleling •SimpleDriveRequirements •Lead-Free

IRFInternational Rectifier

英飞凌英飞凌科技公司

IRF

PowerMOSFET

文件:176.64 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.94 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

PowerMOSFET

文件:217.94 Kbytes Page:9 Pages

VishayVishay Siliconix

威世科技

Vishay

DCaxialcompactfan

文件:299.9 Kbytes Page:4 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialcompactfan

文件:1.05667 Mbytes Page:4 Pages

EBMPAPST

ebm-papst

EBMPAPST

DCaxialfans

文件:379.04 Kbytes Page:3 Pages

EBMPAPST

ebm-papst

EBMPAPST

Tubeaxial

文件:155.29 Kbytes Page:1 Pages

EBMPAPST

ebm-papst

EBMPAPST

Tubeaxial

文件:155.29 Kbytes Page:1 Pages

EBMPAPST

ebm-papst

EBMPAPST

IRF614产品属性

  • 类型

    描述

  • 型号

    IRF614

  • 功能描述

    MOSFET N-Chan 250V 2.7 Amp

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2024-4-23 22:58:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
2016+
TO220
3000
只做原装,假一罚十,公司可开17%增值税发票!
IR
17+
TO-220
5000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Vishay Siliconix
23+
D2PAK(TO-263)
30000
晶体管-分立半导体产品-原装正品
IR
23+
TO-220
9888
专做原装正品,假一罚百!
IR
23+
TO-220AB
8600
全新原装现货
Vishay Siliconix
21+
TO2203
13880
公司只售原装,支持实单
IR
23+
NA/
34250
原装现货,当天可交货,原型号开票
IR
23+
TO-220
35890
VISHAY(威世)
23+
TO-263-3
8357
支持大陆交货,美金交易。原装现货库存。
IR
15+
TO-220
11560
全新原装,现货库存,长期供应

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