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IRF331价格
参考价格:¥4.1922
型号:IRF3315PBF 品牌:INTERNATIONAL 备注:这里有IRF331多少钱,2024年最近7天走势,今日出价,今日竞价,IRF331批发/采购报价,IRF331行情走势销售排行榜,IRF331报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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IRF331 | N-CHANNELPOWERMOSFETS FEATURES ●LowRDS(on) ●Improvedinductiveruggedness ●Fastswitchingtimes ●Ruggedpolysilicongatecellstructure ●LowInputcapacitance ●Extendedsafeoperatingarea ●Improvedhightemperaturereliability ●TO-3package(Standard) | SamsungSamsung Group 三星三星半导体 | ||
IRF331 | N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | ||
IRF331 | N-ChannelPowerMOSFETs,5.5A,350V/400V Description Thesedevicesaren-channol,enhancementmode,powerMOSFETsdesignedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcontrols,relayandsolenoiddrivers. •VQSRatedat±20V •SiliconGateforFastSwitchingSp | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | ||
IRF331 | iscN-ChannelMOSFETTransistor DESCRIPTION •VGSRatedat±20V •SiliconGateforFastSwitchingSpeeds •IDSS,VDS(on),SOAandVGS(th)specifiedatElevatedtemperature •Rugged APPLICATIONS •Designedespeciallyforhighvoltage,highspeedapplications,suchasoff-lineswitchingpowersupplies,UPS,ACandDCmotorcont | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ||
PowerMOSFET(Vdss=150V,Rds(on)=0.07ohm,Id=27A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
N-ChannelMOSFETTransistor •DESCRITION •Combinewiththefastswitchingspeedandruggedizeddevicedesign •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤70mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperati | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-262package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
PowerMOSFET(Vdss=150V,Rds(on)=0.082ohm,Id=21A) Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | |||
HEXFETPowerMOSFET Description FifthGenerationHEXFETsfromInternationalRectifierutilizeadvancedprocessingtechniquestoachieveextremelylowon-resistancepersiliconarea.Thisbenefit,combinedwiththefastswitchingspeedandruggedizeddevicedesignthatHEXFETPowerMOSFETsarewellknownfor,provide | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET N-CH 150V D2PAK 分立半导体产品 晶体管 - FET,MOSFET - 单个 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:391.31 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:237.5 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
HEXFETPowerMOSFET 文件:143.01 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:237.5 Kbytes Page:8 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:391.31 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
ADVANCEDPROCESSTECHNOLOGY 文件:391.31 Kbytes Page:11 Pages | IRFInternational Rectifier 英飞凌英飞凌科技公司 | |||
SHIELDEDSMTPOWERINDUCTORS ●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment | PRODUCTWELLProductwell Precision Elect.CO.,LTD 寶德華股台灣寶德華股有限公司 | |||
POWERINDUCTOR ●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | |||
WIREWOUNDSMDINDUCTOR ●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer | AITSEMIAiT Semiconductor Inc. AiT創瑞科技 | |||
CRESTAUDIONEXSYSCONTROL 文件:48.96 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | |||
CRESTAUDIONEXSYSCONTROL 文件:48.96 Kbytes Page:1 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 |
IRF331产品属性
- 类型
描述
- 型号
IRF331
- 制造商
Rochester Electronics LLC
- 功能描述
- Bulk
- 制造商
Harris Corporation
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
22+ |
TO-263 |
9000 |
原装正品 |
|||
IR |
2016+ |
TO220 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
INFINEON/IR |
2023+ |
TO-263 |
1289 |
一级代理优势现货,全新正品直营店 |
|||
isc |
2024 |
D2PAK/TO-263 |
140 |
国产品牌isc,可替代原装 |
|||
IR |
22+ |
TO-220 |
5000 |
绝对全新原装现货 |
|||
23+ |
N/A |
89950 |
正品授权货源可靠 |
||||
VB |
2019 |
TO220 |
55000 |
绝对原装正品假一罚十! |
|||
IR |
10+ |
TO-263 |
6294 |
只做原装正品 |
|||
IR |
2022+ |
TO262 |
57550 |
||||
Infineon Technologies |
22+ |
862 |
全新原装深圳现货 |
IRF331规格书下载地址
IRF331参数引脚图相关
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IRF331数据表相关新闻
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瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-28
DdatasheetPDF页码索引
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